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BDW84A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDW84A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1 MHz
   Ganancia de corriente contínua (hfe): 750
   Paquete / Cubierta: TO218

 Búsqueda de reemplazo de transistor bipolar BDW84A

 

BDW84A Datasheet (PDF)

 ..1. Size:222K  inchange semiconductor
bdw84 bdw84a bdw84b bdw84c.pdf

BDW84A
BDW84A

isc Silicon PNP Darlington Power Transistor BDW84/A/B/CDESCRIPTIONCollector Current -I = -15ACHigh DC Current Gain-h = 750(Min)@ I = -6AFE CComplement to Type BDW83/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE MAXIMUM RATINGS(T

 9.1. Size:67K  st
bdw83 bdw84.pdf

BDW84A
BDW84A

BDW83CBDW84CCOMPLEMENTARY SILICON POWER DARLINGTONTRANSISTORS BDW83C IS A SGS-THOMSON PREFERREDSALESTYPE COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS 3 LINEAR AND SWITCHING INDUSTRIAL2EQUIPMENT1DESCRIPTION TO-218The BDW83C is a silicon epitaxial-base NPNpower monolithic Darlington transis

 9.2. Size:218K  inchange semiconductor
bdw84d.pdf

BDW84A
BDW84A

isc Silicon PNP Darlington Power Transistor BDW84DDESCRIPTIONCollector Current -I = -15ACHigh DC Current Gain-h = 750(Min)@ I = -6AFE CComplement to Type BDW83DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 9.3. Size:123K  inchange semiconductor
bdw84 84a 84b 84c 84d.pdf

BDW84A
BDW84A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDW84/84A/84B/84C/84D DESCRIPTION With TO-3PN package Complement to type BDW83/83A/83B/83C/83D DARLINGTON High DC current gain APPLICATIONS For use in power linear and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified ou

 9.4. Size:218K  inchange semiconductor
bdw84c.pdf

BDW84A
BDW84A

isc Product Specificationisc Silicon PNP Darlington Power Transistor BDW84CDESCRIPTIONCollector Current -I = -15ACHigh DC Current Gain-h = 750(Min)@ I = -6AFE CComplement to Type BDW83CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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