Биполярный транзистор BDW84A
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: BDW84A
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 80
W
Макcимально допустимое напряжение коллектор-база (Ucb): 60
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 8
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 1
MHz
Статический коэффициент передачи тока (hfe): 750
Корпус транзистора:
TO218
Аналоги (замена) для BDW84A
BDW84A
Datasheet (PDF)
..1. Size:222K inchange semiconductor
bdw84 bdw84a bdw84b bdw84c.pdf isc Silicon PNP Darlington Power Transistor BDW84/A/B/CDESCRIPTIONCollector Current -I = -15ACHigh DC Current Gain-h = 750(Min)@ I = -6AFE CComplement to Type BDW83/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE MAXIMUM RATINGS(T
9.1. Size:67K st
bdw83 bdw84.pdf BDW83CBDW84CCOMPLEMENTARY SILICON POWER DARLINGTONTRANSISTORS BDW83C IS A SGS-THOMSON PREFERREDSALESTYPE COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS 3 LINEAR AND SWITCHING INDUSTRIAL2EQUIPMENT1DESCRIPTION TO-218The BDW83C is a silicon epitaxial-base NPNpower monolithic Darlington transis
9.2. Size:218K inchange semiconductor
bdw84d.pdf isc Silicon PNP Darlington Power Transistor BDW84DDESCRIPTIONCollector Current -I = -15ACHigh DC Current Gain-h = 750(Min)@ I = -6AFE CComplement to Type BDW83DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
9.3. Size:123K inchange semiconductor
bdw84 84a 84b 84c 84d.pdf Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDW84/84A/84B/84C/84D DESCRIPTION With TO-3PN package Complement to type BDW83/83A/83B/83C/83D DARLINGTON High DC current gain APPLICATIONS For use in power linear and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified ou
9.4. Size:218K inchange semiconductor
bdw84c.pdf isc Product Specificationisc Silicon PNP Darlington Power Transistor BDW84CDESCRIPTIONCollector Current -I = -15ACHigh DC Current Gain-h = 750(Min)@ I = -6AFE CComplement to Type BDW83CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE
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