BDW84D Todos los transistores

 

BDW84D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDW84D
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 150 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1 MHz
   Ganancia de corriente contínua (hfe): 750
   Paquete / Cubierta: TO218

 Búsqueda de reemplazo de transistor bipolar BDW84D

 

BDW84D Datasheet (PDF)

 ..1. Size:218K  inchange semiconductor
bdw84d.pdf

BDW84D BDW84D

isc Silicon PNP Darlington Power Transistor BDW84DDESCRIPTIONCollector Current -I = -15ACHigh DC Current Gain-h = 750(Min)@ I = -6AFE CComplement to Type BDW83DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 9.1. Size:67K  st
bdw83 bdw84.pdf

BDW84D BDW84D

BDW83CBDW84CCOMPLEMENTARY SILICON POWER DARLINGTONTRANSISTORS BDW83C IS A SGS-THOMSON PREFERREDSALESTYPE COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS 3 LINEAR AND SWITCHING INDUSTRIAL2EQUIPMENT1DESCRIPTION TO-218The BDW83C is a silicon epitaxial-base NPNpower monolithic Darlington transis

 9.2. Size:123K  inchange semiconductor
bdw84 84a 84b 84c 84d.pdf

BDW84D BDW84D

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDW84/84A/84B/84C/84D DESCRIPTION With TO-3PN package Complement to type BDW83/83A/83B/83C/83D DARLINGTON High DC current gain APPLICATIONS For use in power linear and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified ou

 9.3. Size:218K  inchange semiconductor
bdw84c.pdf

BDW84D BDW84D

isc Product Specificationisc Silicon PNP Darlington Power Transistor BDW84CDESCRIPTIONCollector Current -I = -15ACHigh DC Current Gain-h = 750(Min)@ I = -6AFE CComplement to Type BDW83CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE

 9.4. Size:222K  inchange semiconductor
bdw84 bdw84a bdw84b bdw84c.pdf

BDW84D BDW84D

isc Silicon PNP Darlington Power Transistor BDW84/A/B/CDESCRIPTIONCollector Current -I = -15ACHigh DC Current Gain-h = 750(Min)@ I = -6AFE CComplement to Type BDW83/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE MAXIMUM RATINGS(T

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


BDW84D
  BDW84D
  BDW84D
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D

 

 

 
Back to Top