BDW94 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDW94
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 20 MHz
Ganancia de corriente contínua (hFE): 15000
Encapsulados: TO220
Búsqueda de reemplazo de BDW94
- Selecciónⓘ de transistores por parámetros
BDW94 datasheet
..1. Size:43K st
bdw93 bdw94.pdf 

BDW93CFI BDW94CFI COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL 3 2 EQUIPMENT 1 DESCRIPTION ISOWATT220 The BDW93CFI, is a silicon epitaxial-base NPN transistor in monolithic
..2. Size:39K fairchild semi
bdw94.pdf 

BDW94/A/B/C Power Linear and Switching Applications Power Darlington TR Complement to BDW93, BDW93A, BDW93B and BDW93C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BDW94 - 45 V BDW94A - 60 V BDW94B - 80 V BDW94C -
..3. Size:160K onsemi
bdw94 bdw94c.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
..5. Size:217K inchange semiconductor
bdw94 bdw94a bdw94b bdw94c.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor BDW94/A/B/C DESCRIPTION Collector Current -I = -12A C Collector-Emitter Sustaining Voltage- V = -45V(Min)- BDW94; -60V(Min)- BDW94A CEO(SUS) -80V(Min)- BDW94B; -100V(Min)- BDW94C Complement to Type BDW93/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f
0.1. Size:91K st
bdw93cfp bdw94cfp.pdf 

BDW93CFP BDW94CFP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE FULLY MOLDED INSULATED PACKAGE 2000 V DC INSULATION (U.L. COMPLIANT) 3 2 1 APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL T0-220FP EQUIPMENT
0.2. Size:93K st
bdw93-bdw94.pdf 

BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 DESCRIPTION 1 The BDW93B, and BDW93C are silicon epitaxial-base NPN power transistors in TO-220 monolithic Darlington config
0.3. Size:43K fairchild semi
bdw94c.pdf 

January 2005 BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application Power Darlington TR Complement to BDW93 and BDW93C Respectively TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BDW94 -45 V BDW94C -100 V VCEO Collector-Emitter Voltage
0.4. Size:419K fairchild semi
bdw94cf.pdf 

July 2005 BDW94CF PNP Epitaxial Silicon Transistor Power Linear and Switching Application Power Darlington TR Complement to BDW93CF Respectively TO-220F 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V IC Collector Current (DC) -12 A
0.5. Size:661K jilin sino
bdw93c bdw94c.pdf 

DARLINGTON COMPLEMENTARY POWER TRANSISTORS R BDW93C/BDW94C APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES
0.6. Size:140K shantou-huashan
hbdw94c.pdf 

PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW94C APPLICATIONS Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-220 Tstg Storage Temperature -65 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25
0.7. Size:195K inchange semiconductor
bdw94cfp.pdf 

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDW94CFP DESCRIPTION With TO-220F packaging Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Complement to Type BDW93CFP Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control Elec
Otros transistores... BDW93
, BDW93A
, BDW93AFI
, BDW93B
, BDW93BFI
, BDW93C
, BDW93CFI
, BDW93FI
, BC639
, BDW94A
, BDW94B
, BDW94C
, BDX10
, BDX10-4
, BDX10-5
, BDX10-6
, BDX10-7
.