Справочник транзисторов. BDW94

 

Биполярный транзистор BDW94 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BDW94
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 80 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 12 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 20 MHz
   Статический коэффициент передачи тока (hfe): 15000
   Корпус транзистора: TO220

 Аналоги (замена) для BDW94

 

 

BDW94 Datasheet (PDF)

 ..1. Size:43K  st
bdw93 bdw94.pdf

BDW94
BDW94

BDW93CFIBDW94CFICOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTONCONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIAL32EQUIPMENT1DESCRIPTIONISOWATT220The BDW93CFI, is a silicon epitaxial-base NPNtransistor in monolithic

 ..2. Size:39K  fairchild semi
bdw94.pdf

BDW94
BDW94

BDW94/A/B/CPower Linear and Switching Applications Power Darlington TR Complement to BDW93, BDW93A, BDW93B and BDW93C respectivelyTO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BDW94 - 45 V: BDW94A - 60 V: BDW94B - 80 V: BDW94C -

 ..3. Size:160K  onsemi
bdw94 bdw94c.pdf

BDW94
BDW94

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..4. Size:123K  inchange semiconductor
bdw94 a b c.pdf

BDW94
BDW94

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDW94/A/B/C DESCRIPTION With TO-220C package High DC Current Gain DARLINGTON Complement to type BDW93/A/B/C APPLICATIONS Hammer drivers, Audio amplifiers applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25

 ..5. Size:217K  inchange semiconductor
bdw94 bdw94a bdw94b bdw94c.pdf

BDW94
BDW94

INCHANGE Semiconductorisc Silicon PNP Power Transistor BDW94/A/B/CDESCRIPTIONCollector Current -I = -12ACCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BDW94; -60V(Min)- BDW94ACEO(SUS)-80V(Min)- BDW94B; -100V(Min)- BDW94CComplement to Type BDW93/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f

 0.1. Size:91K  st
bdw93cfp bdw94cfp.pdf

BDW94
BDW94

BDW93CFPBDW94CFPCOMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES MONOLITHIC DARLINGTONCONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE FULLY MOLDED INSULATED PACKAGE 2000 V DC INSULATION (U.L. COMPLIANT)321APPLICATIONS LINEAR AND SWITCHING INDUSTRIALT0-220FPEQUIPMENT

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bdw93-bdw94.pdf

BDW94
BDW94

BDW93B/BDW93CBDW94B/BDW94CCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT32DESCRIPTION1The BDW93B, and BDW93C are siliconepitaxial-base NPN power transistors inTO-220monolithic Darlington config

 0.3. Size:43K  fairchild semi
bdw94c.pdf

BDW94
BDW94

January 2005BDW94/CPNP Epitaxial Silicon TransistorPower Linear and Switching Application Power Darlington TR Complement to BDW93 and BDW93C RespectivelyTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage: BDW94 -45 V: BDW94C -100 VVCEO Collector-Emitter Voltage:

 0.4. Size:419K  fairchild semi
bdw94cf.pdf

BDW94
BDW94

July 2005BDW94CFPNP Epitaxial Silicon TransistorPower Linear and Switching Application Power Darlington TR Complement to BDW93CF RespectivelyTO-220F11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -100 VVCEO Collector-Emitter Voltage -100 VIC Collector Current (DC) -12 A

 0.5. Size:661K  jilin sino
bdw93c bdw94c.pdf

BDW94
BDW94

DARLINGTON COMPLEMENTARY POWER TRANSISTORS RBDW93C/BDW94C APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES

 0.6. Size:140K  shantou-huashan
hbdw94c.pdf

BDW94
BDW94

PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW94C APPLICATIONS Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25

 0.7. Size:195K  inchange semiconductor
bdw94cfp.pdf

BDW94
BDW94

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor BDW94CFPDESCRIPTIONWith TO-220F packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to Type BDW93CFPMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElec

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