Биполярный транзистор BDW94 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BDW94
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 20 MHz
Статический коэффициент передачи тока (hfe): 15000
Корпус транзистора: TO220
BDW94 Datasheet (PDF)
bdw93 bdw94.pdf
BDW93CFIBDW94CFICOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTONCONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIAL32EQUIPMENT1DESCRIPTIONISOWATT220The BDW93CFI, is a silicon epitaxial-base NPNtransistor in monolithic
bdw94.pdf
BDW94/A/B/CPower Linear and Switching Applications Power Darlington TR Complement to BDW93, BDW93A, BDW93B and BDW93C respectivelyTO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BDW94 - 45 V: BDW94A - 60 V: BDW94B - 80 V: BDW94C -
bdw94 bdw94c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
bdw94 a b c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDW94/A/B/C DESCRIPTION With TO-220C package High DC Current Gain DARLINGTON Complement to type BDW93/A/B/C APPLICATIONS Hammer drivers, Audio amplifiers applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25
bdw94 bdw94a bdw94b bdw94c.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor BDW94/A/B/CDESCRIPTIONCollector Current -I = -12ACCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BDW94; -60V(Min)- BDW94ACEO(SUS)-80V(Min)- BDW94B; -100V(Min)- BDW94CComplement to Type BDW93/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f
bdw93cfp bdw94cfp.pdf
BDW93CFPBDW94CFPCOMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES MONOLITHIC DARLINGTONCONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE FULLY MOLDED INSULATED PACKAGE 2000 V DC INSULATION (U.L. COMPLIANT)321APPLICATIONS LINEAR AND SWITCHING INDUSTRIALT0-220FPEQUIPMENT
bdw93-bdw94.pdf
BDW93B/BDW93CBDW94B/BDW94CCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT32DESCRIPTION1The BDW93B, and BDW93C are siliconepitaxial-base NPN power transistors inTO-220monolithic Darlington config
bdw94c.pdf
January 2005BDW94/CPNP Epitaxial Silicon TransistorPower Linear and Switching Application Power Darlington TR Complement to BDW93 and BDW93C RespectivelyTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage: BDW94 -45 V: BDW94C -100 VVCEO Collector-Emitter Voltage:
bdw94cf.pdf
July 2005BDW94CFPNP Epitaxial Silicon TransistorPower Linear and Switching Application Power Darlington TR Complement to BDW93CF RespectivelyTO-220F11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -100 VVCEO Collector-Emitter Voltage -100 VIC Collector Current (DC) -12 A
bdw93c bdw94c.pdf
DARLINGTON COMPLEMENTARY POWER TRANSISTORS RBDW93C/BDW94C APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES
hbdw94c.pdf
PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW94C APPLICATIONS Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25
bdw94cfp.pdf
INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor BDW94CFPDESCRIPTIONWith TO-220F packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to Type BDW93CFPMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElec
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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