BDX14
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDX14
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 29
W
Tensión colector-base (Vcb): 90
V
Tensión colector-emisor (Vce): 55
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4
MHz
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar BDX14
BDX14
Datasheet (PDF)
..1. Size:211K inchange semiconductor
bdx14.pdf
isc Silicon PNP Power Transistor BDX14DESCRIPTIONContinuous Collector Current-I = -4ACCollector-Emitter Sustaining Voltage-: V = -55V(Min.)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
0.1. Size:14K semelab
bdx14a.pdf
BDX14AAMECHANICAL DATAPNPDimensions in mmSILICON TRANSISTOR,EPITAXIAL BASE6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.FEATURES: LF Large Signal Power Amplification Medium Current Switching1.27 (0.050)4.83 (0.190) 1.91 (0.750)5.33 (0.210)9.14 (0.360)min.TO66 Package.Pin 1 Base Pin 2 Emitter Case - Collector
0.2. Size:10K semelab
bdx14s.pdf
BDX14SDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 60V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif
0.3. Size:211K inchange semiconductor
bdx14a.pdf
isc Silicon PNP Power Transistor BDX14ADESCRIPTIONContinuous Collector Current-I = -4ACCollector-Emitter Sustaining Voltage-: V = -55V(Min.)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF Large Signal Power Amplificationand Medium Current SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.