BDX14 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Power Transistor BDX14DESCRIPTIONContinuous Collector Current-I = -4ACCollector-Emitter Sustaining Voltage-: V = -55V(Min.)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

BDX14AAMECHANICAL DATAPNPDimensions in mmSILICON TRANSISTOR,EPITAXIAL BASE6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.FEATURES: LF Large Signal Power Amplification Medium Current Switching1.27 (0.050)4.83 (0.190) 1.91 (0.750)5.33 (0.210)9.14 (0.360)min.TO66 Package.Pin 1 Base Pin 2 Emitter Case - Collector

BDX14SDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 60V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif

isc Silicon PNP Power Transistor BDX14ADESCRIPTIONContinuous Collector Current-I = -4ACCollector-Emitter Sustaining Voltage-: V = -55V(Min.)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF Large Signal Power Amplificationand Medium Current SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA