BDX14 - Даташиты. Аналоги. Основные параметры

isc Silicon PNP Power Transistor BDX14 DESCRIPTION Continuous Collector Current-I = -4A C Collector-Emitter Sustaining Voltage- V = -55V(Min.) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

BDX14AA MECHANICAL DATA PNP Dimensions in mm SILICON TRANSISTOR, EPITAXIAL BASE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. FEATURES LF Large Signal Power Amplification Medium Current Switching 1.27 (0.050) 4.83 (0.190) 1.91 (0.750) 5.33 (0.210) 9.14 (0.360) min. TO66 Package. Pin 1 Base Pin 2 Emitter Case - Collector

BDX14S Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 60V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif

isc Silicon PNP Power Transistor BDX14A DESCRIPTION Continuous Collector Current-I = -4A C Collector-Emitter Sustaining Voltage- V = -55V(Min.) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF Large Signal Power Amplification and Medium Current Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA