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BDX34E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDX34E
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 70 W
   Tensión colector-base (Vcb): 140 V
   Tensión colector-emisor (Vce): 140 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 20 MHz
   Ganancia de corriente contínua (hfe): 750
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar BDX34E

 

BDX34E Datasheet (PDF)

 9.1. Size:135K  motorola
bdx33b bdx34b.pdf pdf_icon

BDX34E

Order this document MOTOROLA by BDX33B/D SEMICONDUCTOR TECHNICAL DATA NPN BDX33B Darlington Complementary Silicon Power Transistors BDX33C* PNP . . . designed for general purpose and low speed switching applications. BDX34B High DC Current Gain hFE = 2500 (typ.) at IC = 4.0 Collector Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B BD

 9.2. Size:39K  fairchild semi
bdx34a.pdf pdf_icon

BDX34E

BDX34/A/B/C Power Linear and Switching Applications High Gain General Purpose Power Darlington TR Complement to BDX33/33A/33B/33C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BDX34 - 45 V BDX34A - 60 V BDX34B

 9.3. Size:134K  onsemi
bdx34cg.pdf pdf_icon

BDX34E

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. http //onsemi.com Features DARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0 10 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdc COMPLEMENTARY SILICON VCEO(sus) = 80 Vdc (min) -

 9.4. Size:134K  onsemi
bdx34bg.pdf pdf_icon

BDX34E

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. http //onsemi.com Features DARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0 10 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdc COMPLEMENTARY SILICON VCEO(sus) = 80 Vdc (min) -

Otros transistores... BDX33C , BDX33D , BDX33E , BDX34 , BDX34A , BDX34B , BDX34C , BDX34D , SS8050 , BDX35 , BDX36 , BDX37 , BDX40 , BDX40-4 , BDX40-5 , BDX40-6 , BDX40-7 .

History: AC151-7 | 2SC353 | AC142HK | RN1964FE | RN1970FE | BF761 | DDTA123YE

 

 
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