BDX53AFI Todos los transistores

 

BDX53AFI . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDX53AFI

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 20 MHz

Ganancia de corriente contínua (hfe): 750

Empaquetado / Estuche: ISO220

Búsqueda de reemplazo de transistor bipolar BDX53AFI

 

BDX53AFI Datasheet (PDF)

4.1. bdx53a.pdf Size:41K _fairchild_semi

BDX53AFI
BDX53AFI

BDX53/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BDX53 45 V : BDX53A

5.1. bdx53cg.pdf Size:148K _update

BDX53AFI
BDX53AFI

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE • High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS • Collector Emitter Sustaining Voltage -

5.2. bdx53bfp.pdf Size:86K _update

BDX53AFI
BDX53AFI

BDX53BFP ® SILICON POWER DARLINGTON TRANSISTOR APPLICATIONS: GENERAL PURPOSE SWITCHING AND AMPLIFIER LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING 3 DESCRIPTION 2 1 The BDX53BFP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington T0-220FP configuration mounted in T0-220FP fully molded isolated pa

 5.3. bdx53bg.pdf Size:148K _update

BDX53AFI
BDX53AFI

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE • High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS • Collector Emitter Sustaining Voltage -

5.4. bdx53b bdx54.pdf Size:169K _motorola

BDX53AFI
BDX53AFI

Order this document MOTOROLA by BDX53B/D SEMICONDUCTOR TECHNICAL DATA NPN Plastic Medium-Power BDX53B Complementary Silicon Transistors BDX53C PNP . . . designed for generalpurpose amplifier and lowspeed switching applications. BDX54B High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdc BDX54C VCEO(sus) = 80 Vdc (Min) BDX

 5.5. bdx53d-54.pdf Size:43K _st

BDX53AFI
BDX53AFI

BDX53BFI BDX54BFI COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS: GENERAL PURPOSE SWITCHING AND AMPLIFIER LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 3 The BDX53BFI is silicon epitaxial-base NPN 2 1 power transistor in monolithic Darlington configuration and are mounted in ISOWATT220 ISOWATT220 plastic package. It is in

5.6. bdx53---.pdf Size:34K _st

BDX53AFI
BDX53AFI

BDX53BFP SILICON POWER DARLINGTON TRANSISTOR APPLICATIONS: GENERAL PURPOSE SWITCHING AND AMPLIFIER LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) 3 DESCRIPTION 2 1 The BDX53BFP is a silicon epitaxial-base NPN power transistor in monolithic Darlington T0-220FP configuration and are mounted in T0-220FP fully molded iso

5.7. bdx53f.pdf Size:70K _st

BDX53AFI
BDX53AFI

BDX53F BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL 3 2 EQUIPMENT 1 DESCRIPTION TO-220 The BDX53F is a silicon epitaxial-base NPN power transistors in monolithic

5.8. bdx53-54.pdf Size:94K _st

BDX53AFI
BDX53AFI

BDX53A/53B/53C BDX54B/54C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDX53B, BDX53C, BDX54B AND BDX54C ARE SGS-THOMSON PREFERRED SALESTYPES APPLICATIONS AUDIO AMPLIFIERS LINEAR AND SWITCHING INDUSTRIAL 3 2 EQUIPMENT 1 TO-220 DESCRIPTION The BDX53A, BDX53B and BDX53C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted

5.9. bdx53c.pdf Size:149K _fairchild_semi

BDX53AFI
BDX53AFI

March 2011 BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Features Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit C B TO-220 1 R1 R2 1.Base 2.Collector 3.Emitter R1 ? 8.4k? E R2 ? 0.3k? Absolute Maximum Ratings TC = 25C unle

5.10. bdx53 bdx54.pdf Size:187K _mospec

BDX53AFI
BDX53AFI

A A A A

5.11. bdx53 bdx54 abc.pdf Size:72K _cdil

BDX53AFI
BDX53AFI

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BDX53, BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C BDX53, 53A, 53B, 53C NPN PLASTIC POWER TRANSISTORS BDX54, 54A, 54B, 54C PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. C

5.12. bdx53 a b c.pdf Size:120K _inchange_semiconductor

BDX53AFI
BDX53AFI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High DC current gain Ў¤ DARLINGTON Ў¤ Complement to type BDX54/A/B/C APPLICATIONS Ў¤ Power linear and switching applications Ў¤ Hammer drivers,audio amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDX53/A/B/C Absolute

5.13. bdx53f.pdf Size:103K _inchange_semiconductor

BDX53AFI
BDX53AFI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX53F DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain- : hFE= 500(Min)@ IC= 2A ·Complement to Type BDX54F APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Vol

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


BDX53AFI
  BDX53AFI
  BDX53AFI
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: RD9FE-V | RD9FE-T | RD9FE-R | FJP3305H2 | CHT807PTS | CHT807PTR | CHT807PTQ | 3DA4544Y | 3DA4544O | 3DA4544R | 3DD2553 | 2SD1710C | NP061A3 | KTC601UY | KSC5802D | FA1L3Z-L38 | FA1L3Z-L37 | FA1L3Z-L36 | EB102 | DC8550E |

 

 

 
Back to Top