BDX63C Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDX63C
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 2000
Encapsulados: TO3
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BDX63C datasheet
bdx63 bdx63a bdx63b bdx63c.pdf
isc Silicon NPN Darlington Power Transistor BDX63/A/B/C DESCRIPTION Collector Current -I = 8A C High DC Current Gain-h = 1000(Min)@ I = 3A FE C Complement to Type BDX62/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATIN
bdx63 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX63/A/B/C DESCRIPTION Collector Current -IC= 8A High DC Current Gain-hFE= 1000(Min)@ IC= 3A Complement to Type BDX62/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VAL
Otros transistores... BDX62 , BDX62A , BDX62B , BDX62C , BDX62L , BDX63 , BDX63A , BDX63B , 2N3906 , BDX63L , BDX64 , BDX64A , BDX64B , BDX64C , BDX64L , BDX65 , BDX65A .
History: XA131 | 2SB121 | 2N5096 | BDX63 | 2SA1335 | BD363B
History: XA131 | 2SB121 | 2N5096 | BDX63 | 2SA1335 | BD363B
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