BDX63C Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX63C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO3
BDX63C Transistor Equivalent Substitute - Cross-Reference Search
BDX63C Datasheet (PDF)
bdx63 bdx63a bdx63b bdx63c.pdf
isc Silicon NPN Darlington Power Transistor BDX63/A/B/CDESCRIPTIONCollector Current -I = 8ACHigh DC Current Gain-h = 1000(Min)@ I = 3AFE CComplement to Type BDX62/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RATIN
bdx63 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX63/A/B/C DESCRIPTION Collector Current -IC= 8A High DC Current Gain-hFE= 1000(Min)@ IC= 3A Complement to Type BDX62/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VAL
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: GSTSS8050LT1
History: GSTSS8050LT1
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