BDX67 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BDX67, A, B, C NPN SILICON DARLINGTONS NPN SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitBDX67 60 BDX67A 80 VCEO Collector-Emitter Voltage V BDX67B 100 BDX67C 120 BDX67 80 BDX67A 100 VCBO Collector-Base Voltage V BDX67B 120 BDX67C 140 BDX67 BDX6

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX67 DESCRIPTION With TO-3 package High current capability DARLINGTON APPLICATIONS Designed for power amplification and switching application. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25)

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX67/A/B/C DESCRIPTION High DC Current Gain- : hFE= 1000(Min)@ IC= 10A Low Saturation Voltage Complement to Type BDX66/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER

isc Silicon NPN Darlington Power Transistor BDX67/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 10AFE CLow Saturation VoltageComplement to Type BDX66/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RATING

BDX67BDX67ABDX67BBDX67CMECHANICAL DATANPN EPITAXIAL BASEDimensions in mmDARLINGTON POWERTRANSISTOR26.6 max. 9.0 max.4. 22. 5NPN epitaxial base transistors inmonolithic Darlington circuit foraudio output stages and generalB Eamplifier and switchingapplications.PNP complements are:10.912.8BDX66, BDX66A, BDX66B, BDX66C.TO3 Package.Case connected to col

BDX67CECCDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 16A 12.70 (0.50) All Semelab hermetically sealed products can be processed i

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX67C DESCRIPTION With TO-3 package High current capability DARLINGTON APPLICATIONS Designed for power amplification and switching application. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25)

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX67B DESCRIPTION With TO-3 package High current capability DARLINGTON APPLICATIONS Designed for power amplification and switching application. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25)