BDX67 - описание и поиск аналогов

BDX67, A, B, C NPN SILICON DARLINGTONS NPN SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX67 60 BDX67A 80 VCEO Collector-Emitter Voltage V BDX67B 100 BDX67C 120 BDX67 80 BDX67A 100 VCBO Collector-Base Voltage V BDX67B 120 BDX67C 140 BDX67 BDX6

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX67 DESCRIPTION With TO-3 package High current capability DARLINGTON APPLICATIONS Designed for power amplification and switching application. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 )

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX67/A/B/C DESCRIPTION High DC Current Gain- hFE= 1000(Min)@ IC= 10A Low Saturation Voltage Complement to Type BDX66/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER

isc Silicon NPN Darlington Power Transistor BDX67/A/B/C DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 10A FE C Low Saturation Voltage Complement to Type BDX66/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATING

BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA NPN EPITAXIAL BASE Dimensions in mm DARLINGTON POWER TRANSISTOR 26.6 max. 9.0 max. 4. 2 2. 5 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general B E amplifier and switching applications. PNP complements are 10.9 12.8 BDX66, BDX66A, BDX66B, BDX66C. TO3 Package. Case connected to col

BDX67CECC Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 16A 12.70 (0.50) All Semelab hermetically sealed products can be processed i

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX67C DESCRIPTION With TO-3 package High current capability DARLINGTON APPLICATIONS Designed for power amplification and switching application. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 )

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX67B DESCRIPTION With TO-3 package High current capability DARLINGTON APPLICATIONS Designed for power amplification and switching application. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 )