BDX88B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Darlington Power Transistor BDX88/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 750(Min)@ I = -6AFE CCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BDX88; -60V(Min)- BDX88ACEO(SUS)-80V(Min)- BDX88B; -100V(Min)- BDX88CComplement to Type BDX87/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX88C DESCRIPTION With TO-3 package Complement to type BDX87C DARLINGTON APPLICATIONS Designed for use in power linear and switching application. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX88/A/B/C DESCRIPTION High DC Current Gain- : hFE= 750(Min)@ IC= -6A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -80V(Min)- BDX88B; -100V(Min)- BDX88C Complement to Type BDX87/A/B/C APPLICATIONS Designed for use in power linear