BDX88B Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX88B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 35 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO3
BDX88B Transistor Equivalent Substitute - Cross-Reference Search
BDX88B Datasheet (PDF)
bdx88 bdx88a bdx88b bdx88c.pdf
isc Silicon PNP Darlington Power Transistor BDX88/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 750(Min)@ I = -6AFE CCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BDX88; -60V(Min)- BDX88ACEO(SUS)-80V(Min)- BDX88B; -100V(Min)- BDX88CComplement to Type BDX87/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD
bdx88c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX88C DESCRIPTION With TO-3 package Complement to type BDX87C DARLINGTON APPLICATIONS Designed for use in power linear and switching application. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25
bdx88 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX88/A/B/C DESCRIPTION High DC Current Gain- : hFE= 750(Min)@ IC= -6A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -80V(Min)- BDX88B; -100V(Min)- BDX88C Complement to Type BDX87/A/B/C APPLICATIONS Designed for use in power linear
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
