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BDY58 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDY58
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 175 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 125 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 25 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO3
 

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BDY58 Datasheet (PDF)

 ..1. Size:153K  comset
 bdy57 bdy58.pdf pdf_icon

BDY58

BDY57 BDY58NPN SILICON TRANSISTORS, DIFFUSED MESANPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY57 80VCEO Collector-Emitter Voltage VBDY58 125BDY57 120VCBO Collector-Base Voltage VBDY58 160BDY57VEBO Emitter-Base Voltage 10 VBDY58BDY57IC Collector Current

 ..2. Size:164K  cn sptech
 bdy58.pdf pdf_icon

BDY58

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor BDY58DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 125V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageAPPLICATIONSLF signal power amplification.High current fast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Base Voltage 160 VC

 ..3. Size:207K  inchange semiconductor
 bdy58.pdf pdf_icon

BDY58

isc Silicon NPN Power Transistor BDY58DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 125V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLF signal power amplification.High current fast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 ..4. Size:117K  inchange semiconductor
 bdy57 bdy58.pdf pdf_icon

BDY58

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDY57 BDY58 DESCRIPTION With TO-3 package High current capability Fast switching speed APPLICATIONS For use in low frequency large signal power amplifications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum rati

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: HSE909 | A1517 | 2N657S

 

 
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