BDY58 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BDY58
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 175 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 125 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 25 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de transistor bipolar BDY58

BDY58 Datasheet (PDF)

..1. Size:153K comset
bdy57 bdy58.pdf

BDY57 BDY58NPN SILICON TRANSISTORS, DIFFUSED MESANPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY57 80VCEO Collector-Emitter Voltage VBDY58 125BDY57 120VCBO Collector-Base Voltage VBDY58 160BDY57VEBO Emitter-Base Voltage 10 VBDY58BDY57IC Collector Current

..2. Size:164K cn sptech
bdy58.pdf

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor BDY58DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 125V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageAPPLICATIONSLF signal power amplification.High current fast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Base Voltage 160 VC

..3. Size:207K inchange semiconductor
bdy58.pdf

isc Silicon NPN Power Transistor BDY58DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 125V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLF signal power amplification.High current fast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

..4. Size:117K inchange semiconductor
bdy57 bdy58.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDY57 BDY58 DESCRIPTION With TO-3 package High current capability Fast switching speed APPLICATIONS For use in low frequency large signal power amplifications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum rati

0.1. Size:203K comset
bdy57-bdy58.pdf

0.2. Size:11K semelab
bdy58s.pdf

BDY58SDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 125V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

0.3. Size:11K semelab
bdy58c.pdf

BDY58CDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 125V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

0.4. Size:11K semelab
bdy58a.pdf

BDY58ADimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 125V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

0.5. Size:11K semelab
bdy58b.pdf

BDY58BDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 125V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

0.6. Size:207K inchange semiconductor
bdy58s.pdf

isc Silicon NPN Power Transistor BDY58SDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 125V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLF signal power amplification.High current fast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Otros transistores... BDY48-400 , BDY49 , BDY53 , BDY54 , BDY55 , BDY56 , BDY57 , BDY57A , B647 , BDY58R , BDY60 , BDY60A , BDY60B , BDY61 , BDY62 , BDY63 , BDY64 .

History: GS9013F | D40CU4 | 2N1495 | 2SD1005-V | 2SD1061R | 2SD1025 | 2SD1097

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