BDY58R Todos los transistores

 

BDY58R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDY58R

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 175 W

Tensión colector-base (Vcb): 160 V

Tensión colector-emisor (Vce): 160 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 30 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO3

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BDY58R datasheet

 9.1. Size:203K  comset
bdy57-bdy58.pdf pdf_icon

BDY58R

BDY57 BDY58 NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY57 80 VCEO Collector-Emitter Voltage V BDY58 125 BDY57 120 VCBO Collector-Base Voltage V BDY58 160 BDY57 VEBO Emitter-Base Voltage 10 V BDY58 BDY57 IC Collector Current

 9.2. Size:153K  comset
bdy57 bdy58.pdf pdf_icon

BDY58R

BDY57 BDY58 NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY57 80 VCEO Collector-Emitter Voltage V BDY58 125 BDY57 120 VCBO Collector-Base Voltage V BDY58 160 BDY57 VEBO Emitter-Base Voltage 10 V BDY58 BDY57 IC Collector Current

 9.3. Size:11K  semelab
bdy58s.pdf pdf_icon

BDY58R

BDY58S Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 125V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.4. Size:11K  semelab
bdy58c.pdf pdf_icon

BDY58R

BDY58C Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 125V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

Otros transistores... BDY49 , BDY53 , BDY54 , BDY55 , BDY56 , BDY57 , BDY57A , BDY58 , 2SD669 , BDY60 , BDY60A , BDY60B , BDY61 , BDY62 , BDY63 , BDY64 , BDY65 .

History: BD351B

 

 

 


History: BD351B

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