BDY71 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDY71
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 29 W
Tensión colector-base (Vcb): 90 V
Tensión colector-emisor (Vce): 55 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 0.8 MHz
Ganancia de corriente contínua (hFE): 80
Encapsulados: TO66
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BDY71 datasheet
bdy71.pdf
isc Silicon NPN Power Transistor BDY71 DESCRIPTION Continuous Collector Current-I = 4A C Collector Power Dissipation- P = 29W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C
bdy71x.pdf
SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDY71X High Power Hermetic TO-66 Metal Package Ideally suited for Switching and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 90V VCEO Collector Emitter Voltage 55V VCEX Collector Emitter Voltage VBE = -1.5
bdy71x.pdf
isc Silicon NPN Power Transistor BDY71X DESCRIPTION Continuous Collector Current-I = 4A C Collector Power Dissipation- P = 29W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for accordance with the requirements of BS, CECC and JAN,JANTX, JANTXV and JANS specifications ABSOLUTE MAXIMUM RATINGS(T =2
Otros transistores... BDY63 , BDY64 , BDY65 , BDY66 , BDY67 , BDY68 , BDY69 , BDY70 , B647 , BDY72 , BDY73 , BDY74 , BDY75 , BDY76 , BDY77 , BDY78 , BDY79 .
History: BDY66 | BEL407
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