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BDY71 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDY71
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 29 W
   Tensión colector-base (Vcb): 90 V
   Tensión colector-emisor (Vce): 55 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 0.8 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: TO66
 

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BDY71 Datasheet (PDF)

 ..1. Size:210K  inchange semiconductor
 bdy71.pdf pdf_icon

BDY71

isc Silicon NPN Power Transistor BDY71DESCRIPTIONContinuous Collector Current-I = 4ACCollector Power Dissipation-: P = 29W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

 0.1. Size:79K  semelab
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BDY71

SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDY71X High Power Hermetic TO-66 Metal Package Ideally suited for Switching and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 90V VCEO Collector Emitter Voltage 55V VCEX Collector Emitter Voltage VBE = -1.5

 0.2. Size:210K  inchange semiconductor
 bdy71x.pdf pdf_icon

BDY71

isc Silicon NPN Power Transistor BDY71XDESCRIPTIONContinuous Collector Current-I = 4ACCollector Power Dissipation-: P = 29W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for accordance with the requirementsof BS, CECC and JAN,JANTX, JANTXV andJANS specificationsABSOLUTE MAXIMUM RATINGS(T =2

Otros transistores... BDY63 , BDY64 , BDY65 , BDY66 , BDY67 , BDY68 , BDY69 , BDY70 , 2SD882 , BDY72 , BDY73 , BDY74 , BDY75 , BDY76 , BDY77 , BDY78 , BDY79 .

History: 2N2222ADCSM | 2SC1351 | 3CG17B

 

 
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