All Transistors. BDY71 Datasheet

 

BDY71 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDY71
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 29 W
   Maximum Collector-Base Voltage |Vcb|: 90 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO66

 BDY71 Transistor Equivalent Substitute - Cross-Reference Search

   

BDY71 Datasheet (PDF)

 ..1. Size:210K  inchange semiconductor
bdy71.pdf

BDY71
BDY71

isc Silicon NPN Power Transistor BDY71DESCRIPTIONContinuous Collector Current-I = 4ACCollector Power Dissipation-: P = 29W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

 0.1. Size:79K  semelab
bdy71x.pdf

BDY71
BDY71

SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDY71X High Power Hermetic TO-66 Metal Package Ideally suited for Switching and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 90V VCEO Collector Emitter Voltage 55V VCEX Collector Emitter Voltage VBE = -1.5

 0.2. Size:210K  inchange semiconductor
bdy71x.pdf

BDY71
BDY71

isc Silicon NPN Power Transistor BDY71XDESCRIPTIONContinuous Collector Current-I = 4ACCollector Power Dissipation-: P = 29W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for accordance with the requirementsof BS, CECC and JAN,JANTX, JANTXV andJANS specificationsABSOLUTE MAXIMUM RATINGS(T =2

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top