BDY71 Specs and Replacement
Type Designator: BDY71
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 29 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO66
BDY71 Substitution
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BDY71 datasheet
isc Silicon NPN Power Transistor BDY71 DESCRIPTION Continuous Collector Current-I = 4A C Collector Power Dissipation- P = 29W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C... See More ⇒
SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDY71X High Power Hermetic TO-66 Metal Package Ideally suited for Switching and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 90V VCEO Collector Emitter Voltage 55V VCEX Collector Emitter Voltage VBE = -1.5... See More ⇒
isc Silicon NPN Power Transistor BDY71X DESCRIPTION Continuous Collector Current-I = 4A C Collector Power Dissipation- P = 29W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for accordance with the requirements of BS, CECC and JAN,JANTX, JANTXV and JANS specifications ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒
Detailed specifications: BDY63 , BDY64 , BDY65 , BDY66 , BDY67 , BDY68 , BDY69 , BDY70 , B647 , BDY72 , BDY73 , BDY74 , BDY75 , BDY76 , BDY77 , BDY78 , BDY79 .
History: BDY67
Keywords - BDY71 pdf specs
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History: BDY67
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