BF258 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BF258  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 250 V

Tensión colector-emisor (Vce): 250 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 55 MHz

Capacitancia de salida (Cc): 7 pF

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO39

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BF258 datasheet

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BF258

BF257 BF258-BF259 HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case.They are particularly designed for videooutput stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Value Symbol Para

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BF258

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON HIGH VOLTAGE TRANSISTORS BF257, BF 258, BF259 TO-39 Metal Can Package INTENDED FOR VIDEO OUTPUT STAGES IN BLACK AND WHITE AND IN COLOUR TELEVISION REVEIVERS. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL BF257 BF258 BF259 UNITS VCEO Collector Emit

 0.1. Size:10K  semelab
bf258dcsm.pdf pdf_icon

BF258

BF258DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 250V CEO 6.22 0.13 A = 1.27 0.13 I = 0.1A C (0.0

Otros transistores... BF257A, BF257B, BF257C, BF257CSM, BF257D, BF257G, BF257N, BF257S, 2SD669A, BF258A, BF259, BF259A, BF259G, BF260, BF261, BF262, BF263