BF485 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BF485 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.83 W
Tensión colector-base (Vcb): 350 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 90 MHz
Ganancia de corriente contínua (hFE): 50
Encapsulados: TO92
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BF485 datasheet
bf483 bf485 bf487.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF483; BF485; BF487 NPN high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF483; BF485; BF487 FEATURES PINNING Low feedback capacitance. PIN DESCRIPTION 1 base A
bf483 bf485 bf487 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF483; BF485; BF487 NPN high-voltage transistors 1999 Apr 12 Product specification Supersedes data of 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors BF483; BF485; BF487 FEATURES PINNING Low feedback capacitance. PIN DESCRIPTION 1 base APPLICATIONS 2 collector Intended for us
bf485pn.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 BF485PN NPN/PNP high voltage transistors Product specification 2000 Aug 02 Philips Semiconductors Product specification NPN/PNP high voltage transistors BF485PN FEATURES PINNING High voltage (max. 350 V) PIN DESCRIPTION Low current (max. 200 mA) 1 and 4 emitter TR1; TR2 High power dissipation (600 mW) 5 and 2
Otros transistores... BF472S, BF479, BF479S, BF479T, BF480, BF481, BF483, BF484, D880, BF486, BF487, BF488, BF491, BF491K, BF491L, BF491M, BF491P1
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