BF485 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BF485
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.83 W
Tensión colector-base (Vcb): 350 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 90 MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar BF485
BF485 Datasheet (PDF)
bf483 bf485 bf487.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF483; BF485; BF487NPN high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistors BF483; BF485; BF487FEATURES PINNING Low feedback capacitance.PIN DESCRIPTION1 baseA
bf483 bf485 bf487 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF483; BF485; BF487NPN high-voltage transistors1999 Apr 12Product specificationSupersedes data of 1996 Dec 09Philips Semiconductors Product specificationNPN high-voltage transistors BF483; BF485; BF487FEATURES PINNING Low feedback capacitance.PIN DESCRIPTION1 baseAPPLICATIONS2 collector Intended for us
bf485pn.pdf
DISCRETE SEMICONDUCTORSDATA SHEETdbook, halfpageM3D302BF485PNNPN/PNP high voltage transistorsProduct specification 2000 Aug 02Philips Semiconductors Product specificationNPN/PNP high voltage transistors BF485PNFEATURES PINNING High voltage (max. 350 V)PIN DESCRIPTION Low current (max. 200 mA)1 and 4 emitter TR1; TR2 High power dissipation (600 mW)5 and 2
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
