BF485 Datasheet and Replacement
Type Designator: BF485
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.83 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO92
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BF485 Datasheet (PDF)
bf483 bf485 bf487.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF483; BF485; BF487NPN high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistors BF483; BF485; BF487FEATURES PINNING Low feedback capacitance.PIN DESCRIPTION1 baseA
bf483 bf485 bf487 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF483; BF485; BF487NPN high-voltage transistors1999 Apr 12Product specificationSupersedes data of 1996 Dec 09Philips Semiconductors Product specificationNPN high-voltage transistors BF483; BF485; BF487FEATURES PINNING Low feedback capacitance.PIN DESCRIPTION1 baseAPPLICATIONS2 collector Intended for us
bf485pn.pdf

DISCRETE SEMICONDUCTORSDATA SHEETdbook, halfpageM3D302BF485PNNPN/PNP high voltage transistorsProduct specification 2000 Aug 02Philips Semiconductors Product specificationNPN/PNP high voltage transistors BF485PNFEATURES PINNING High voltage (max. 350 V)PIN DESCRIPTION Low current (max. 200 mA)1 and 4 emitter TR1; TR2 High power dissipation (600 mW)5 and 2
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: BF390 | IT121-71 | 2SC3468 | S8050MG-C | CMUT5088E | BUL45 | 2PD601AQ
Keywords - BF485 transistor datasheet
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History: BF390 | IT121-71 | 2SC3468 | S8050MG-C | CMUT5088E | BUL45 | 2PD601AQ



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