BF485 Datasheet. Specs and Replacement
Type Designator: BF485 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.83 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO92
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BF485 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF483; BF485; BF487 NPN high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF483; BF485; BF487 FEATURES PINNING Low feedback capacitance. PIN DESCRIPTION 1 base A... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF483; BF485; BF487 NPN high-voltage transistors 1999 Apr 12 Product specification Supersedes data of 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors BF483; BF485; BF487 FEATURES PINNING Low feedback capacitance. PIN DESCRIPTION 1 base APPLICATIONS 2 collector Intended for us... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 BF485PN NPN/PNP high voltage transistors Product specification 2000 Aug 02 Philips Semiconductors Product specification NPN/PNP high voltage transistors BF485PN FEATURES PINNING High voltage (max. 350 V) PIN DESCRIPTION Low current (max. 200 mA) 1 and 4 emitter TR1; TR2 High power dissipation (600 mW) 5 and 2 ... See More ⇒
Detailed specifications: BF472S, BF479, BF479S, BF479T, BF480, BF481, BF483, BF484, D880, BF486, BF487, BF488, BF491, BF491K, BF491L, BF491M, BF491P1
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