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2N30 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N30

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Corriente del colector DC máxima (Ic): 0.007 A

Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 2 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hfe): 22

Empaquetado / Estuche: TO7

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2N30 Datasheet (PDF)

1.1. 2n307.pdf Size:277K _rca

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1.2. 2n3055.pdf Size:422K _rca

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1.3. 2n3053 40053.pdf Size:483K _rca

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1.4. 2n105 2n206 2n247 2n269 2n301 2n301a 2n331 2n356 2n357 2n358.pdf Size:319K _rca

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1.5. 2n3054.pdf Size:425K _rca

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1.6. 2n2869 2n301.pdf Size:685K _rca

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1.7. 2n2870 2n301a.pdf Size:230K _rca

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1.8. 2n3019dcsm.pdf Size:385K _upd

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NPN SILICON DUAL TRANSISTORS 2N3019DCSM • High Voltage, High Current Dual Small Signal NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS (Each Side, TA = 25°C unless otherwise stated) Each Side Total Device Each Side

1.9. 2n3055g.pdf Size:71K _upd

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2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications. Features http://onsemi.com • DC Current Gain - hFE = 20-70 @ IC = 4 Adc • Collector-Emitter Saturation Voltage - 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS • Exc

1.10. 2n3053smd05.pdf Size:10K _upd

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2N3053SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 40V IC = 0.7A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab he

1.11. 2n3055ag.pdf Size:89K _upd

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2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These 15 AMPERE devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc

1.12. 2n3007.pdf Size:10K _upd

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2N3007 Dimensions in mm (inches). Bipolar NPNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPNP Device. VCEO = 100V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.35A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX,

1.13. 2n3055esmd.pdf Size:10K _upd

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2N3055ESMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 15A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26

1.14. 2n3053smd.pdf Size:10K _upd

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2N3053SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 40V IC = 0.7A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26

1.15. 2n3012csm.pdf Size:10K _upd

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2N3012CSM Dimensions in mm (inches). Bipolar NPN Device in a 0.51 ± 0.10 Hermetically sealed LCC1 (0.02 ± 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. Bipolar NPN Device. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) 1.40 (0.055) 1.02 ± 0.10 max. VCEO = 12V A = (0.04 ± 0.004

1.16. 2n3055.pdf Size:130K _motorola

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Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for generalpurpose switching and amplifier applications. *Motorola Preferred Device DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS

1.17. 2n3043-45 2n3048.pdf Size:134K _motorola

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1.18. mj2955-2n3055.pdf Size:130K _motorola

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Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for generalpurpose switching and amplifier applications. *Motorola Preferred Device DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS

1.19. 2n3055a mj2955a mj15015 mj15016.pdf Size:235K _motorola

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Order this document MOTOROLA by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon 2N3055A High-Power Transistors * MJ15015 . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dctodc converters, inverters, or M

1.20. 2n3055 mj2955.pdf Size:179K _motorola

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Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for generalpurpose switching and amplifier applications. *Motorola Preferred Device DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS

1.21. 2n3019 cnv 2.pdf Size:51K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N3019 NPN medium power transistor 1997 Jun 19 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N3019 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 bas

1.22. 2n3019.pdf Size:46K _st

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2N3019 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 140 V VCEO Colle

1.23. 2n3019 .pdf Size:47K _st

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2N3019 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 140 V VCEO Colle

1.24. 2n3055.pdf Size:39K _st

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2N3055 SILICON NPN TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Vo

1.25. 2n3055 mj2955 2.pdf Size:90K _st

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2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio Amplifier 1 2 Description TO-3 The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal schematic diagram Tab

1.26. fqpf22n30.pdf Size:738K _fairchild_semi

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May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 12A, 300V, RDS(on) = 0.16? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC) planar stripe, DMOS technology. Low Crss ( typical 40 pF) This advanced technology has been especially tail

1.27. fqp22n30.pdf Size:757K _fairchild_semi

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May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 21A, 300V, RDS(on) = 0.16? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC) planar stripe, DMOS technology. Low Crss ( typical 40 pF) This advanced technology has been especially tailo

1.28. 2n3091.pdf Size:239K _international_rectifier

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1.29. 2n3053-a.pdf Size:77K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.30. 2n3009 2n3013 2n3014.pdf Size:79K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.31. 2n3054-a.pdf Size:88K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.32. 2n3019 2n3020.pdf Size:60K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.33. 2n3054.pdf Size:88K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.34. ixfr102n30p.pdf Size:151K _ixys

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VDSS = 300 V IXFR 102N30P PolarHTTM HiPerFET ID25 = 60 A Power MOSFET ? ? RDS(on) ? 36 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) ? trr ? ? 200 ns ? ? N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 150 C 300 V E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M? 300 V VGS Continu

1.35. ixfh52n30q ixfk52n30q ixft52n30q.pdf Size:70K _ixys

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IXFH 52N30Q HiPerFETTM VDSS = 300 V IXFK 52N30Q Power MOSFETs ID25 = 52 A IXFT 52N30Q Q-Class RDS(on) = 60 mW trr ? 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C; RGS = 1 MW 300 V VGS Continuous 20 V

1.36. ixtq52n30p ixtt52n30p.pdf Size:168K _ixys

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IXTQ52N30P VDSS = 300 V PolarHTTM IXTT52N30P ID25 = 52 A Power MOSFET ? ? RDS(on) ? 66 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 300 V VGSS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C52 A D (TAB) S IDM TC = 25 C, pulse width l

1.37. ixfk102n30p.pdf Size:132K _ixys

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Preliminary Technical Information VDSS = 300 V IXFK 102N30P PolarHTTM HiPerFET ID25 = 102 A Power MOSFET ? ? RDS(on) ? 33 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 300 V VGS Continuous 20 V VGS

1.38. ixtk102n30p.pdf Size:225K _ixys

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VDSS = 300 V IXTK 102N30P PolarHTTM ID25 = 102 A Power MOSFET ? ? RDS(on) ? 33 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 300 V VGSS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 102 A D (TAB) S ID(RMS) External lead current limit

1.39. 2n3055a mj15015 mj15016.pdf Size:89K _onsemi

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2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These 15 AMPERE devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc con

1.40. 2n3055 mj2955.pdf Size:70K _onsemi

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2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications. Features http://onsemi.com DC Current Gain - hFE = 20-70 @ IC = 4 Adc Collector-Emitter Saturation Voltage - 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS Excellent Sa

1.41. 12n30.pdf Size:158K _utc

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UNISONIC TECHNOLOGIES CO., LTD 12N30 Preliminary Power MOSFET 12A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand hig

1.42. 2n3055.pdf Size:16K _utc

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UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNITS Collector-Base Voltage VCBO 100 V Collector-Emitte

1.43. uf2n30.pdf Size:130K _utc

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UNISONIC TECHNOLOGIES CO., LTD UF2N30 Preliminary Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF2N30 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * 2A, 300V, RDS(ON)<2? @ VGS=10V, ID=2A * High switch

1.44. mj15015-16 2n3055a mj2955a.pdf Size:193K _mospec

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A A A A

1.45. 2n3001.pdf Size:31K _bocasemi

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Boca Semiconductor Corp. BSC http://www.bocasemi.com

1.46. 2n3053 a.pdf Size:69K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3053 / 2N3053A TO-39 Metal Can Package General Purpose Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N3053 2N3053A UNIT Collector Emitter Voltage VCEO 40 60 V Collector Base Voltage VCBO 60 80 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous

1.47. 2n3055hv.pdf Size:240K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055HV NPN POWER TRANSISTOR TO-3 Metal Can Package Switching Regulator and Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage ( Open Emitter) V 100 VCEO Collector Emitter Voltage (Open Base) V 100 VEBO Emitter Base Voltage V 7.

1.48. 2n3019 2n3020.pdf Size:75K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3019 / 2N3020 TO-39 Metal Can Package General Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 80 V Collector Base Voltage VCBO 140 V Emitter Base Voltage VEBO 7.0 V Collector Current Continuous IC 1.0 A Power Dissipa

1.49. 2n3055 mj2955.pdf Size:330K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055 NPN SILICON PLANAR POWER TRANSISTORS MJ2955 PNP TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITS VALUE Collector Base Voltage VCBO V 100 Collector Emitter Voltage VCEO V 60 Collector Emitter Voltage(RBE=100?)

1.50. 2n3055.pdf Size:237K _jmnic

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3055 DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc ·Excellent Safe Operating Area APPLICATIONS ·Designed for general–purpose switching and amplifier applications. P

1.51. kmb012n30qa.pdf Size:803K _kec

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SEMICONDUCTOR KMB012N30QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly H suitable for DC/DC Converter and Battery pack.. T D P G L U FEATURES A ·VDSS=30V, ID=12A. DIM MILLIMETERS ·Drain to Source On Resistan

1.52. kma5d2n30xa.pdf Size:831K _kec

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SEMICONDUCTOR KMA5D2N30XA TECHNICAL DATA N-CH Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for cellular phone and netebook computer power management and other battery powered circuits. FEATURES ·VDSS=30V, ID=5.2A. ·Drain-Sour

1.53. kmb012n30q.pdf Size:462K _kec

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SEMICONDUCTOR KMB012N30Q TECHNICAL DATA N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. H T D P G L FEATURES VDSS=30V, ID=12A. A Low Drain-Source ON Resistance. DIM MILLIMETERS : RDS(ON)=7m (Max.) @ VGS=10V A 5.05+0.25/-0.20 : RDS(ON)=11m (

1.54. 2n3027-29 2n3030-32.pdf Size:301K _microsemi

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1.55. 2n3019 2n3057 2n3700.pdf Size:71K _microsemi

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TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices Qualified Level 2N3019 2N3057A 2N3700 JAN 2N3019S 2N3700S JANTX JANTXV JANS MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 140 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 7.0 Vdc VEBO 2N3019, 2N3019S Collector Cur

1.56. 2n30542n3054a.pdf Size:161K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3054 2N3054A DESCRIPTION Ў¤ With TO-66 package APPLICATIONS Ў¤ Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB

1.57. 2n3055a.pdf Size:33K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055A DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A APPLICATIONS ·Designed for high power audio, stepping motor and other linear applications. It can also be us

1.58. 2n3055.pdf Size:107K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955 APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=2

1.59. 2n3055h.pdf Size:31K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055H DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALU

1.60. 2n3054.pdf Size:45K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3054 DESCRIPTION ·Continuous Collector Current-IC= 4A ·Collector Power Dissipation- : PC= 25W @TC= 25? APPLICATIONS ·Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V V Collecto

1.61. ixbt42n300hv.pdf Size:268K _igbt

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Preliminary Technical Information High Voltage, BiMOSFETTM VCES = 3000V IXBT42N300HV Monolithic Bipolar MOS IXBH42N300HV IC110 = 42A Transistor  VCE(sat)   3.0V   TO-268HV (IXBT) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V TO-247HV (IXBH) VGES Continuous ± 25 V VGEM Trans

1.62. ixbt22n300hv.pdf Size:253K _igbt

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Advance Technical Information High Voltage, High Gain VCES = 3000V IXBT22N300HV BIMOSFETTM Monolithic IXBH22N300HV IC110 = 22A Bipolar MOS Transistor  VCE(sat)  2.7V    TO-268HV (IXBT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 3000 V E C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V TO-247HV (IXBH) VGEM

1.63. ixbh42n300hv.pdf Size:268K _igbt

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Preliminary Technical Information High Voltage, BiMOSFETTM VCES = 3000V IXBT42N300HV Monolithic Bipolar MOS IXBH42N300HV IC110 = 42A Transistor  VCE(sat)   3.0V   TO-268HV (IXBT) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V TO-247HV (IXBH) VGES Continuous ± 25 V VGEM Trans

1.64. ixbt32n300.pdf Size:172K _igbt

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Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBH32N300 BIMOSFETTM Monolithic IXBT32N300 IC110 = 32A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V G C (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V C E VGES Continuous ± 20 V VGEM Transient ± 30 V

1.65. ixgh42n30c3.pdf Size:173K _igbt

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2N30

VCES = 300V IXGA42N30C3 GenX3TM 300V IGBT IC110 = 42A IXGH42N30C3 ≤ ≤ VCE(sat) ≤ 1.85V ≤ ≤ High Speed PT IGBTs for IXGP42N30C3 50-150kHz switching tfi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V E C (TAB) VGES Continuous ±20 V TO-247 (IXGH) VGEM Transient ±30 V

1.66. ixbt12n300hv.pdf Size:246K _igbt

2N30
2N30

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBA12N300HV BIMOSFETTM Monolithic IXBT12N300HV IC110 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-263 (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V TO-268 (IXBT) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V VGEM Trans

1.67. ixbh12n300.pdf Size:176K _igbt

2N30
2N30

High Voltage, High Gain VCES = 3000V IXBT12N300 BIMOSFETTM Monolithic IXBH12N300 IC110 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 3000 V C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V TO-247 (IXBH) VGEM Transient ± 30 V IC25 TC = 25°C 30 A

1.68. ixba12n300hv.pdf Size:246K _igbt

2N30
2N30

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBA12N300HV BIMOSFETTM Monolithic IXBT12N300HV IC110 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-263 (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V TO-268 (IXBT) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V VGEM Trans

1.69. ixbf42n300.pdf Size:202K _igbt

2N30
2N30

Preliminary Technical Information High Voltage, BiMOSFETTM VCES = 3000V IXBF42N300 Monolithic Bipolar MOS IC110 = 24A Transistor ≤ VCE(sat) ≤ ≤ 3.0V ≤ ≤ (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 25 V 1 2 VGEM Transient ± 35 V

1.70. ixga42n30c3.pdf Size:173K _igbt

2N30
2N30

VCES = 300V IXGA42N30C3 GenX3TM 300V IGBT IC110 = 42A IXGH42N30C3 ≤ ≤ VCE(sat) ≤ 1.85V ≤ ≤ High Speed PT IGBTs for IXGP42N30C3 50-150kHz switching tfi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V E C (TAB) VGES Continuous ±20 V TO-247 (IXGH) VGEM Transient ±30 V

1.71. ixbh32n300.pdf Size:172K _igbt

2N30
2N30

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBH32N300 BIMOSFETTM Monolithic IXBT32N300 IC110 = 32A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V G C (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V C E VGES Continuous ± 20 V VGEM Transient ± 30 V

1.72. ixbt12n300.pdf Size:176K _igbt

2N30
2N30

High Voltage, High Gain VCES = 3000V IXBT12N300 BIMOSFETTM Monolithic IXBH12N300 IC110 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 3000 V C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V TO-247 (IXBH) VGEM Transient ± 30 V IC25 TC = 25°C 30 A

1.73. ixbf12n300.pdf Size:195K _igbt

2N30
2N30

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBF12N300 BIMOSFETTM Monolithic IC90 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V 1 VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V 2 VGES Continuous ± 20 V 5 VGEM Transie

1.74. mmix4b22n300.pdf Size:245K _igbt

2N30
2N30

Advance Technical Information High Voltage, High Gain VCES = 3000V MMIX4B22N300 BIMOSFETTM Monolithic IC90 = 22A Bipolar MOS Transistor C2 C1  VCE(sat)   2.7V   G1 G2 E2C4 E1C3 (Electrically Isolated Tab) G3 G4 C2 E3E4 G2 E2C4 Symbol Test Conditions Maximum Ratings G4 E3E4 C1 VCES TJ = 25°C to 150°C 3000

1.75. mmix4b12n300.pdf Size:252K _igbt

2N30
2N30

Preliminary Technical Information High Voltage, High Gain MMIX4B12N300 VCES = 3000V BIMOSFETTM Monolithic IC110 = 11A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ C2 C1 G1 G2 (Electrically Isolated Tab) E2C4 E1C3 G3 G4 C2 G2 E3E4 E2C4 G4 E3E4 C1 G1 E1C3 Symbol Test Conditions Maximum Ratings G3 VCES TC = 25°C to 150°C 3000 V Isolated Tab E3E4 VCG

1.76. ixbf22n300.pdf Size:196K _igbt

2N30
2N30

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBF22N300 BIMOSFETTM Monolithic IC90 = 22A Bipolar MOS Transistor  VCE(sat)  2.7V    (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V 1 2 VGEM Transient ±

1.77. ixbv22n300s.pdf Size:198K _igbt

2N30
2N30

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBV22N300S BIMOSFETTM Monolithic IC110 = 22A Bipolar MOS Transistor  VCE(sat)  2.7V    PLUS220SMDHV Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V G E VGES Continuous ± 20 V C (Tab) VGEM Transient ± 30 V IC25 TC = 25°C

1.78. ixbf32n300.pdf Size:194K _igbt

2N30
2N30

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBF32N300 BIMOSFETTM Monolithic IC90 = 22A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V 1 VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V 2 VGES Continuous ± 20 V 5 VGEM Transie

1.79. ixbh22n300hv.pdf Size:253K _igbt

2N30
2N30

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBT22N300HV BIMOSFETTM Monolithic IXBH22N300HV IC110 = 22A Bipolar MOS Transistor  VCE(sat)  2.7V    TO-268HV (IXBT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 3000 V E C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V TO-247HV (IXBH) VGEM

1.80. ixgp42n30c3.pdf Size:173K _igbt_a

2N30
2N30

VCES = 300V IXGA42N30C3 GenX3TM 300V IGBT IC110 = 42A IXGH42N30C3 ≤ ≤ VCE(sat) ≤ 1.85V ≤ ≤ High Speed PT IGBTs for IXGP42N30C3 50-150kHz switching tfi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V E C (TAB) VGES Continuous ±20 V TO-247 (IXGH) VGEM Transient ±30 V

1.81. aotf12n30.pdf Size:324K _aosemi

2N30
2N30

AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET General Description Product Summary VDS 350V@150℃ The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11.5A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 0.42Ω popular AC-DC applications.By providing low RDS(on), Ciss and Crss along wi

1.82. aot12n30.pdf Size:324K _aosemi

2N30
2N30

AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET General Description Product Summary VDS 350V@150℃ The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11.5A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 0.42Ω popular AC-DC applications.By providing low RDS(on), Ciss and Crss along wi

1.83. 2n3055.pdf Size:156K _aeroflex

2N30
2N30

NPN Power Silicon Transistor 2N3055 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/407 • TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol Value Units Collector - Emitter Voltage VCEO 70 Vdc Collector - Base Voltage VCBO 100 Vdc Emitter - Base Voltage VEBO 7.0 Vdc Base Current IB 7.0 Adc Collector Current IC 15 Adc Total Power Dissipation @ TA = 25 °C (

Otros transistores... 2N2992 , 2N2993 , 2N2994 , 2N2995 , 2N2996 , 2N2997 , 2N2998 , 2N2999 , BC108 , 2N300 , 2N3000 , 2N3009 , 2N301 , 2N3010 , 2N3011 , 2N3012 , 2N3013 .

 


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BJT: M54561P | M54532P | M54532FP | M54531WP | M54531P | M54531FP | M54530P | M54530FP | M54522WP | LBCW65ALT1G | LBC858CWT1G | LBC848AWT1G | LBC847CPDW1T1G | LBC846ADW1T1G | LBC817-40DPMT1G | LBC817-40DMT1G | LBC817-25DMT1G | LBC817-16DPMT1G | LBC817-16DMT1G | LBC807-40DMT1G |


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