2N30 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N30
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Collector Current |Ic max|: 0.007 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 2 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 22
Noise Figure, dB: -
Package: TO7
2N30 Transistor Equivalent Substitute - Cross-Reference Search
2N30 Datasheet (PDF)
2n3055a mj2955a mj15015 mj15016.pdf
Order this documentMOTOROLAby 2N3055A/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon2N3055AHigh-Power Transistors*MJ15015. . . PowerBase complementary transistors designed for high power audio, steppingmotor and other linear applications. These devices can also be used in powerswitching circuits such as relay or solenoid drivers, dctodc converters, inverters
mj2955-2n3055.pdf
Order this documentMOTOROLAby 2N3055/DSEMICONDUCTOR TECHNICAL DATANPN2N3055 *Complementary Silicon Power PNPMJ2955*Transistors. . . designed for generalpurpose switching and amplifier applications.*Motorola Preferred Device DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage 15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc P
2n3055.pdf
Order this documentMOTOROLAby 2N3055/DSEMICONDUCTOR TECHNICAL DATANPN2N3055 *Complementary Silicon Power PNPMJ2955*Transistors. . . designed for generalpurpose switching and amplifier applications.*Motorola Preferred Device DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage 15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc P
2n3055 mj2955.pdf
Order this documentMOTOROLAby 2N3055/DSEMICONDUCTOR TECHNICAL DATANPN2N3055 *Complementary Silicon Power PNPMJ2955*Transistors. . . designed for generalpurpose switching and amplifier applications.*Motorola Preferred Device DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage 15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc P
2n3019 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N3019NPN medium power transistor1997 Jun 19Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistor 2N3019FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter
2n3055.pdf
2N3055SILICON NPN TRANSISTORn SGS-THOMSON PREFERRED SALESTYPEDESCRIPTIONThe 2N3055 is a silicon epitaxial-base NPNtransistor in Jedec TO-3 metal case. It is intendedfor power switching circuits, series and shuntregulators, output stages and high fidelityamplifiers.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base
2n3055 mj2955 2.pdf
2N3055MJ2955Complementary power transistorsFeatures Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose Audio Amplifier12DescriptionTO-3The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.Figure 1. Internal schematic d
2n3019 .pdf
2N3019SMALL SIGNAL NPN TRANSISTORDESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-39 metal case, designedfor high-current, high frequency amplifierapplication. It feature high gain and low saturationvoltage.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base Voltage (IE = 0) 140 VVCEO C
2n3019.pdf
2N3019SMALL SIGNAL NPN TRANSISTORDESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-39 metal case, designedfor high-current, high frequency amplifierapplication. It feature high gain and low saturationvoltage.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base Voltage (IE = 0) 140 VVCEO C
fqpf22n30.pdf
May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 12A, 300V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar stripe, DMOS technology. Low Crss ( typical 40 pF)This advanced technology has been es
fqd2n30tm.pdf
May 2000TMQFETQFETQFETQFETFQD2N30 / FQU2N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 300V, RDS(on) = 3.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 3.7 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology h
fqpf2n30.pdf
May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.34A, 300V, RDS(on) = 3.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 3.7 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been
fqp22n30.pdf
May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 21A, 300V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar stripe, DMOS technology. Low Crss ( typical 40 pF)This advanced technology has been esp
fqp2n30.pdf
May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.1A, 300V, RDS(on) = 3.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 3.7 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been es
fqb2n30tm fqi2n30tu.pdf
May 2000TMQFETQFETQFETQFETFQB2N30 / FQI2N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.1A, 300V, RDS(on) = 3.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 3.7 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology h
2n3053-a.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n3054-a 2n3054.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n3009 2n3013 2n3014.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n3019 2n3020.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
ixga42n30c3.pdf
VCES = 300VIXGA42N30C3GenX3TM 300V IGBTIC110 = 42AIXGH42N30C3 VCE(sat) 1.85V High Speed PT IGBTs forIXGP42N30C350-150kHz switchingtfi typ = 65nsTO-263 (IXGA)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 300 VGVCGR TJ = 25C to 150C, RGE = 1M 300 V EC (TAB)VGES Continuous 20 VTO-247 (IXGH)VGEM Transient 30 V
ixbt12n300.pdf
High Voltage, High GainVCES = 3000VIXBT12N300BIMOSFETTM MonolithicIXBH12N300IC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-268 (IXBT)GSymbol Test Conditions Maximum RatingsEVCES TC = 25C to 150C 3000 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247 (IXBH)VGEM Transient 30 VIC25 TC = 25C 30 A
ixth2n300p3hv ixtt2n300p3hv.pdf
Advance Technical InformationHigh Voltage VDSS = 3000VIXTT2N300P3HVPower MOSFETID25 = 2AIXTH2N300P3HV RDS(on) 21 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 3000 VVDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS Continuous 20 VV
ixgp42n30c3.pdf
VCES = 300VIXGA42N30C3GenX3TM 300V IGBTIC110 = 42AIXGH42N30C3 VCE(sat) 1.85V High Speed PT IGBTs forIXGP42N30C350-150kHz switchingtfi typ = 65nsTO-263 (IXGA)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 300 VGVCGR TJ = 25C to 150C, RGE = 1M 300 V EC (TAB)VGES Continuous 20 VTO-247 (IXGH)VGEM Transient 30 V
ixbh32n300.pdf
Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBH32N300BIMOSFETTM MonolithicIXBT32N300IC110 = 32ABipolar MOS TransistorVCE(sat) 3.2VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGC (TAB)VCGR TJ = 25C to 150C, RGE = 1M 3000 VCEVGES Continuous 20 VVGEM Transient 30 V
ixbf42n300.pdf
Preliminary Technical InformationHigh Voltage, BiMOSFETTMVCES = 3000VIXBF42N300Monolithic Bipolar MOSIC110 = 24ATransistorVCE(sat) 3.0V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 25 V12VGEM Transient 35 V
ixfr102n30p.pdf
VDSS = 300 VIXFR 102N30PPolarHTTM HiPerFETID25 = 60 APower MOSFET RDS(on) 36 m (Electrically Isolated Back Surface)trr 200 nsN-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)VDSS TJ = 25 C to 150 C 300 VE153432VDGR TJ = 25 C to 1
ixbf22n300.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBF22N300BIMOSFETTM MonolithicIC90 = 22ABipolar MOS TransistorVCE(sat) 2.7V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transient
ixbv22n300s.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBV22N300SBIMOSFETTM MonolithicIC110 = 22ABipolar MOS TransistorVCE(sat) 2.7VPLUS220SMDHVSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VGEVGES Continuous 20 VC (Tab)VGEM Transient 30 VIC25 TC = 25C
ixfk102n30p.pdf
Preliminary Technical InformationVDSS = 300 VIXFK 102N30PPolarHTTM HiPerFETID25 = 102 APower MOSFET RDS(on) 33 m N-Channel Enhancement Modetrr 200 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS =
mmix4b22n300.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VMMIX4B22N300BIMOSFETTM MonolithicIC90 = 22ABipolar MOS TransistorC2C1VCE(sat) 2.7VG1G2E2C4 E1C3(Electrically Isolated Tab)G3 G4C2E3E4G2E2C4Symbol Test Conditions Maximum RatingsG4E3E4C1VCES TJ = 25C to 150C 3000
ixbh12n300.pdf
High Voltage, High GainVCES = 3000VIXBT12N300BIMOSFETTM MonolithicIXBH12N300IC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-268 (IXBT)GSymbol Test Conditions Maximum RatingsEVCES TC = 25C to 150C 3000 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247 (IXBH)VGEM Transient 30 VIC25 TC = 25C 30 A
ixfh52n30q ixfk52n30q ixft52n30q.pdf
IXFH 52N30QHiPerFETTMVDSS = 300 VIXFK 52N30QPower MOSFETs ID25 = 52 AIXFT 52N30QQ-Class RDS(on) = 60 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrLow Gate Charge and CapacitancesPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 MW 300 VVGS Continuo
ixtq52n30p ixtt52n30p.pdf
IXTQ52N30P VDSS = 300 VPolarHTTMIXTT52N30P ID25 = 52 APower MOSFET RDS(on) 66 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGSS Continuous 20 VVGSM Transient 30 VGID25 TC = 25 C52 AD(TAB)
ixbt12n300hv.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBA12N300HVBIMOSFETTM MonolithicIXBT12N300HVIC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-263 (IXBA)GEC (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VTO-268 (IXBT)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VVGEM Trans
ixbt42n300hv.pdf
Preliminary Technical InformationHigh Voltage, BiMOSFETTMVCES = 3000VIXBT42N300HVMonolithic Bipolar MOSIXBH42N300HVIC110 = 42ATransistorVCE(sat) 3.0VTO-268HV (IXBT)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VTO-247HV (IXBH)VGES Continuous 25 VVGEM Trans
ixbf32n300.pdf
Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBF32N300BIMOSFETTM MonolithicIC90 = 22ABipolar MOS TransistorVCE(sat) 3.2V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 V1VCGR TJ = 25C to 150C, RGE = 1M 3000 V2VGES Continuous 20 V5VGEM Transie
ixbh42n300hv.pdf
Preliminary Technical InformationHigh Voltage, BiMOSFETTMVCES = 3000VIXBT42N300HVMonolithic Bipolar MOSIXBH42N300HVIC110 = 42ATransistorVCE(sat) 3.0VTO-268HV (IXBT)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VTO-247HV (IXBH)VGES Continuous 25 VVGEM Trans
ixbh22n300hv.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBT22N300HVBIMOSFETTM MonolithicIXBH22N300HVIC110 = 22ABipolar MOS TransistorVCE(sat) 2.7VTO-268HV (IXBT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 3000 V E C (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247HV (IXBH)VGEM
ixbf12n300.pdf
Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBF12N300BIMOSFETTM MonolithicIC90 = 12ABipolar MOS TransistorVCE(sat) 3.2V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 V1VCGR TJ = 25C to 150C, RGE = 1M 3000 V2VGES Continuous 20 V5VGEM Transie
ixgh42n30c3.pdf
VCES = 300VIXGA42N30C3GenX3TM 300V IGBTIC110 = 42AIXGH42N30C3 VCE(sat) 1.85V High Speed PT IGBTs forIXGP42N30C350-150kHz switchingtfi typ = 65nsTO-263 (IXGA)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 300 VGVCGR TJ = 25C to 150C, RGE = 1M 300 V EC (TAB)VGES Continuous 20 VTO-247 (IXGH)VGEM Transient 30 V
ixba12n300hv.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBA12N300HVBIMOSFETTM MonolithicIXBT12N300HVIC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-263 (IXBA)GEC (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VTO-268 (IXBT)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VVGEM Trans
mmix4b12n300.pdf
Preliminary Technical InformationHigh Voltage, High GainMMIX4B12N300 VCES = 3000VBIMOSFETTM MonolithicIC110 = 11ABipolar MOS TransistorVCE(sat) 3.2VC2C1G1G2(Electrically Isolated Tab)E2C4 E1C3G3 G4C2G2E3E4E2C4G4E3E4C1G1E1C3Symbol Test Conditions Maximum RatingsG3VCES TC = 25C to 150C 3000 V Isolated TabE3E4VCG
ixbt32n300.pdf
Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBH32N300BIMOSFETTM MonolithicIXBT32N300IC110 = 32ABipolar MOS TransistorVCE(sat) 3.2VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGC (TAB)VCGR TJ = 25C to 150C, RGE = 1M 3000 VCEVGES Continuous 20 VVGEM Transient 30 V
ixtk102n30p.pdf
VDSS = 300 VIXTK 102N30PPolarHTTMID25 = 102 APower MOSFET RDS(on) 33 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGSS Continuous 20 VVGSM Transient 30 VGID25 TC = 25 C 102 A D(TAB)SID(
ixbt22n300hv.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBT22N300HVBIMOSFETTM MonolithicIXBH22N300HVIC110 = 22ABipolar MOS TransistorVCE(sat) 2.7VTO-268HV (IXBT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 3000 V E C (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247HV (IXBH)VGEM
2n3055a mj15015 mj15016.pdf
2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc
2n3055g.pdf
2N3055(NPN), MJ2955(PNP)Preferred Device Complementary SiliconPower TransistorsComplementary silicon power transistors are designed forgeneral-purpose switching and amplifier applications.Featureshttp://onsemi.com DC Current Gain - hFE = 20-70 @ IC = 4 Adc Collector-Emitter Saturation Voltage -15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 AdcPOWER TRANSISTORS Exc
2n3055ag.pdf
2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc
2n3055ag mj15015g mj15016g.pdf
2N3055AG (NPN),MJ15015G (NPN),MJ15016G (PNP)Complementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBase complementary transistors are designed for highpower audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orCOMPLEMENTARY SILICONsolenoid drivers, dc-to-dc converters, invert
2n3055 mj2955.pdf
2N3055(NPN), MJ2955(PNP)Preferred Device Complementary SiliconPower TransistorsComplementary silicon power transistors are designed forgeneral-purpose switching and amplifier applications.Featureshttp://onsemi.com DC Current Gain - hFE = 20-70 @ IC = 4 Adc Collector-Emitter Saturation Voltage -15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 AdcPOWER TRANSISTORS Exc
uf2n30.pdf
UNISONIC TECHNOLOGIES CO., LTD UF2N30 Preliminary Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF2N30 is an N-channel enhancement mode Power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * 2A, 300V, RDS(ON)
12n30.pdf
UNISONIC TECHNOLOGIES CO., LTD 12N30 Preliminary Power MOSFET 12A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N30 is an N-channel mode power MOSFET usingUTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. Italso can withstand
2n3055.pdf
UTC 2N3055 SILICON NPN TRANSISTORSILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3metal case. It is intended for power switching circuits,series and shunt regulators, output stages and high fidelityamplifiers.TO-3ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )PARAMETERS SYMBOL VALUE UNITSCollector-Base Voltage VCBO 100 VCollector-Em
2n3055esmd.pdf
2N3055ESMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 15A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26
2n3053smd.pdf
2N3053SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 40V IC = 0.7A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26
2n3053smd05.pdf
2N3053SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 40V IC = 0.7A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab he
2n3019dcsm.pdf
NPN SILICON DUAL TRANSISTORS 2N3019DCSM High Voltage, High Current Dual Small Signal NPN Transistors. Hermetic Ceramic Surface Mount Package. Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (Each Side, TA = 25C unless otherwise stated) Each Side Total Device Each Side
2n3007.pdf
2N3007Dimensions in mm (inches). Bipolar NPNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar NPNP Device. VCEO = 100V 0.48 (0.019)0.41 (0.016)dia.IC = 0.35A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX,
2n3012csm.pdf
2N3012CSMDimensions in mm (inches). Bipolar NPN Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar NPN Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 12V A =(0.04 0.004
2n3053 a.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR 2N3053 / 2N3053ATO-39Metal Can PackageGeneral Purpose TransistorsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N3053 2N3053A UNITCollector Emitter Voltage VCEO 40 60 VCollector Base Voltage VCBO 60 80 VEmitter Base Voltage VEBO 5.0 VCollector Current Continu
2n3055hv.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3055HVNPN POWER TRANSISTORTO-3Metal Can PackageSwitching Regulator and Power Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage ( Open Emitter) V100VCEOCollector Emitter Voltage (Open Base) V100VEBOEmitter Base Voltage V
2n3019 2n3020.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR 2N3019 / 2N3020TO-39Metal Can PackageGeneral TransistorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCEO 80 VCollector Base Voltage VCBO 140 VEmitter Base Voltage VEBO 7.0 VCollector Current Continuous IC 1.0 APower Diss
2n3055 mj2955.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3055 NPNSILICON PLANAR POWER TRANSISTORSMJ2955 PNPTO-3Metal Can PackageGeneral Purpose Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITSVALUECollector Base Voltage VCBO V100Collector Emitter Voltage VCEO V60Collector Emitter Voltage(RBE=100
2n3055.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2N3055 DESCRIPTION With TO-3 package Complement to type MJ2955 DC Current Gain -hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area APPLICATIONS Designed for generalpurpose switching and amplifier applications.
kma5d2n30xa.pdf
SEMICONDUCTOR KMA5D2N30XATECHNICAL DATA N-CH Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for cellular phone and netebookcomputer power management and other battery powered circuits.FEATURES VDSS=30V, ID=5.2A.Drain-S
kmb012n30q.pdf
SEMICONDUCTOR KMB012N30QTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,portable equipment and battery powered systems.HTD P GLFEATURES VDSS=30V, ID=12A.ALow Drain-Source ON Resistance.DIM MILLIMETERS: RDS(ON)=7m (Max.) @ VGS=10VA 5.05+0.25/-0.20: RDS(ON)=11
kmb012n30qa.pdf
SEMICONDUCTOR KMB012N30QATECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlyHsuitable for DC/DC Converter and Battery pack..TD P GLUFEATURES AVDSS=30V, ID=12A.DIM MILLIMETERSDrain to Source On Resis
2n3019 2n3057 2n3700.pdf
TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices Qualified Level 2N3019 2N3057A 2N3700 JAN 2N3019S 2N3700S JANTX JANTXV JANS MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 140 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 7.0 Vdc VEBO 2N3019, 2N3019S Collector
aot12n30.pdf
AOT12N30/AOTF12N30300V,11.5A N-Channel MOSFETGeneral Description Product Summary VDS350V@150The AOT12N30/AOTF12N30 is fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 11.5Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
aotf12n30.pdf
AOT12N30/AOTF12N30300V,11.5A N-Channel MOSFETGeneral Description Product Summary VDS350V@150The AOT12N30/AOTF12N30 is fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 11.5Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
mtn12n30fp.pdf
Spec. No. : C993FP Issued Date : 2014.12.15 CYStech Electronics Corp.Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS 300VMTN12N30FP ID@VGS=10V, TC=25C 12A RDSON(TYP)@ VGS=10V, ID=6A 248m Description The MTN12N30FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized devic
kqb2n30.pdf
SMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeProduct specificationKQB2N30TO-263Unit: mmFeatures4.57+0.2-0.2+0.11.27-0.12.1A, 300 V. RDS(ON) =3.7 @VGS =10VLow gate
2n3055.pdf
NPN Power Silicon Transistor2N3055Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/407 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol Value UnitsCollector - Emitter Voltage VCEO 70 VdcCollector - Base Voltage VCBO 100 VdcEmitter - Base Voltage VEBO 7.0 VdcBase Current IB 7.0 AdcCollector Current IC 15 AdcTotal Power Dissipation @ TA = 25 C (
nce042n30k.pdf
Pb Free Producthttp://www.ncepower.comNCE042N30KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE042N30K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =100ADS DR =3.2m @ V =10V Schematic diagramDS(ON) GSR =6.8m @ V =4.5VDS(ON)
tsa82n30m.pdf
TSA82N30M 300V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 82A,300V,Max.RDS(on)=46m@ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstand h
2n3055.pdf
2N3055 Silicon NPN Power TransistorDESCRIPTION Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Complement to Type 2N2955 APPLICATIONSDesigned for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collecto
2n3055t3bl.pdf
2N3055T3BLSilicon NPN Power TransistorDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to Type MJ2955APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect
2n3055.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2N3055DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to Type MJ2955APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
2n3054 2n3054a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3054 2N3054A DESCRIPTION With TO-66 package APPLICATIONS Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITI
2n3055a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055A DESCRIPTION Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Complement to Type MJ2955A APPLICATIONS Designed for high power audio, stepping motor and other linear applications. It can also be
aot12n30.pdf
isc N-Channel MOSFET Transistor AOT12N30FEATURESDrain Current I = 11.5A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
2n3055.pdf
isc Silicon NPN Power Transistor 2N3055DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to Type MJ2955Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierappli
aotf12n30.pdf
isc N-Channel MOSFET Transistor AOTF12N30FEATURESDrain Current I = 11.5A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
2n3054.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3054 DESCRIPTION Continuous Collector Current-IC= 4A Collector Power Dissipation- : PC= 25W @TC= 25 APPLICATIONS Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V V C
2n3055h.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055H DESCRIPTION Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS Designed for general-purpose switching and amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER
ixtk102n30p.pdf
Isc N-Channel MOSFET Transistor IXTK102N30PFEATURESWith To-3PL packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
2n3055b.pdf
isc Silicon NPN Power Transistor 2N3055BDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =70-140 @I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM
Datasheet: 2N2992 , 2N2993 , 2N2994 , 2N2995 , 2N2996 , 2N2997 , 2N2998 , 2N2999 , 2N3904 , 2N300 , 2N3000 , 2N3009 , 2N301 , 2N3010 , 2N3011 , 2N3012 , 2N3013 .