2N3012 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3012
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36 W
Tensión colector-base (Vcb): 12 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 400 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO18
Búsqueda de reemplazo de 2N3012
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2N3012 datasheet
0.1. Size:10K semelab
2n3012csm.pdf 
2N3012CSM Dimensions in mm (inches). Bipolar NPN Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar NPN Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 12V A = (0.04 0.004
9.4. Size:51K philips
2n3019 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N3019 NPN medium power transistor 1997 Jun 19 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N3019 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter
9.5. Size:47K st
2n3019 .pdf
2N3019 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 140 V VCEO C
9.6. Size:46K st
2n3019.pdf
2N3019 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 140 V VCEO C
9.7. Size:79K central
2n3009 2n3013 2n3014.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
9.8. Size:60K central
2n3019 2n3020.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
9.9. Size:385K semelab
2n3019dcsm.pdf
NPN SILICON DUAL TRANSISTORS 2N3019DCSM High Voltage, High Current Dual Small Signal NPN Transistors. Hermetic Ceramic Surface Mount Package. Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (Each Side, TA = 25 C unless otherwise stated) Each Side Total Device Each Side
9.10. Size:75K cdil
2n3019 2n3020.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3019 / 2N3020 TO-39 Metal Can Package General Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 80 V Collector Base Voltage VCBO 140 V Emitter Base Voltage VEBO 7.0 V Collector Current Continuous IC 1.0 A Power Diss
9.11. Size:71K microsemi
2n3019 2n3057 2n3700.pdf
TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices Qualified Level 2N3019 2N3057A 2N3700 JAN 2N3019S 2N3700S JANTX JANTXV JANS MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 140 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 7.0 Vdc VEBO 2N3019, 2N3019S Collector
Otros transistores... 2N2999, 2N30, 2N300, 2N3000, 2N3009, 2N301, 2N3010, 2N3011, BD140, 2N3013, 2N3013R, 2N3014, 2N3015, 2N3016, 2N3017, 2N3018, 2N3019
