2N3012. Аналоги и основные параметры
Наименование производителя: 2N3012
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.36 W
Макcимально допустимое напряжение коллектор-база (Ucb): 12 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 400 MHz
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO18
Аналоги (замена) для 2N3012
- подборⓘ биполярного транзистора по параметрам
2N3012 даташит
0.1. Size:10K semelab
2n3012csm.pdf 
2N3012CSM Dimensions in mm (inches). Bipolar NPN Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar NPN Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 12V A = (0.04 0.004
9.4. Size:51K philips
2n3019 cnv 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N3019 NPN medium power transistor 1997 Jun 19 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N3019 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter
9.5. Size:47K st
2n3019 .pdf 
2N3019 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 140 V VCEO C
9.6. Size:46K st
2n3019.pdf 
2N3019 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 140 V VCEO C
9.7. Size:79K central
2n3009 2n3013 2n3014.pdf 
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
9.8. Size:60K central
2n3019 2n3020.pdf 
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
9.9. Size:385K semelab
2n3019dcsm.pdf 
NPN SILICON DUAL TRANSISTORS 2N3019DCSM High Voltage, High Current Dual Small Signal NPN Transistors. Hermetic Ceramic Surface Mount Package. Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (Each Side, TA = 25 C unless otherwise stated) Each Side Total Device Each Side
9.10. Size:75K cdil
2n3019 2n3020.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3019 / 2N3020 TO-39 Metal Can Package General Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 80 V Collector Base Voltage VCBO 140 V Emitter Base Voltage VEBO 7.0 V Collector Current Continuous IC 1.0 A Power Diss
9.11. Size:71K microsemi
2n3019 2n3057 2n3700.pdf 
TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices Qualified Level 2N3019 2N3057A 2N3700 JAN 2N3019S 2N3700S JANTX JANTXV JANS MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 140 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 7.0 Vdc VEBO 2N3019, 2N3019S Collector
Другие транзисторы: 2N2999, 2N30, 2N300, 2N3000, 2N3009, 2N301, 2N3010, 2N3011, BD140, 2N3013, 2N3013R, 2N3014, 2N3015, 2N3016, 2N3017, 2N3018, 2N3019
