BF959 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BF959

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.03 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 600 MHz

Capacitancia de salida (Cc): 0.9 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO92

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BF959 datasheet

 ..1. Size:140K  cdil
 bf959.pdf pdf_icon

BF959

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF959 TO-92 Plastic Package BF 959 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 20 V VCBO Collector Ba

 0.1. Size:111K  motorola
 bf959rev.pdf pdf_icon

BF959

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BF959/D VHF Transistor NPN Silicon BF959 COLLECTOR 1 3 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector Emitter Voltage VCEO 20 Vdc 3 Collector Base Voltage VCBO 30 Vdc CASE 29 04, STYLE 21 Emitter Base Voltage VEBO 3.0 Vdc TO 92 (TO 226AA) Collector Current Continuous IC 100

 0.2. Size:53K  onsemi
 bf959-d.pdf pdf_icon

BF959

BF959 VHF Transistor NPN Silicon Features Pb-Free Packages are Available* http //onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit 3 Collector-Emitter Voltage VCEO 20 Vdc BASE Collector-Base Voltage VCBO 30 Vdc 2 Emitter-Base Voltage VEBO 3.0 Vdc EMITTER Collector Current - Continuous IC 100 mAdc Total Device Dissipation PD MARKING @ TA = 25 C 625 mW Der

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