BF959 Specs and Replacement
Type Designator: BF959
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 0.9 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO92
BF959 Substitution
- BJT ⓘ Cross-Reference Search
BF959 datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF959 TO-92 Plastic Package BF 959 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 20 V VCBO Collector Ba... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BF959/D VHF Transistor NPN Silicon BF959 COLLECTOR 1 3 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector Emitter Voltage VCEO 20 Vdc 3 Collector Base Voltage VCBO 30 Vdc CASE 29 04, STYLE 21 Emitter Base Voltage VEBO 3.0 Vdc TO 92 (TO 226AA) Collector Current Continuous IC 100 ... See More ⇒
BF959 VHF Transistor NPN Silicon Features Pb-Free Packages are Available* http //onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit 3 Collector-Emitter Voltage VCEO 20 Vdc BASE Collector-Base Voltage VCBO 30 Vdc 2 Emitter-Base Voltage VEBO 3.0 Vdc EMITTER Collector Current - Continuous IC 100 mAdc Total Device Dissipation PD MARKING @ TA = 25 C 625 mW Der... See More ⇒
Detailed specifications: BF906, BF914, BF920, BF921, BF921S, BF926, BF936, BF939, BD135, BF967, BF968, BF969, BF969S, BF970, BF970A, BF979, BF979S
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