BF959 Datasheet, Equivalent, Cross Reference Search
Type Designator: BF959
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 0.9 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
BF959 Transistor Equivalent Substitute - Cross-Reference Search
BF959 Datasheet (PDF)
bf959.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORBF959TO-92Plastic PackageBF 959 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 20 VVCBOCollector Ba
bf959rev.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BF959/DVHF TransistorNPN SiliconBF959COLLECTOR13BASE2EMITTERMAXIMUM RATINGSRating Symbol Value Unit12CollectorEmitter Voltage VCEO 20 Vdc 3CollectorBase Voltage VCBO 30 VdcCASE 2904, STYLE 21EmitterBase Voltage VEBO 3.0 VdcTO92 (TO226AA)Collector Current Continuous IC 100
bf959-d.pdf
BF959VHF TransistorNPN SiliconFeatures Pb-Free Packages are Available*http://onsemi.comCOLLECTOR1MAXIMUM RATINGSRating Symbol Value Unit3Collector-Emitter Voltage VCEO 20 VdcBASECollector-Base Voltage VCBO 30 Vdc2Emitter-Base Voltage VEBO 3.0 VdcEMITTERCollector Current - Continuous IC 100 mAdcTotal Device Dissipation PDMARKING@ TA = 25C625 mWDer
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
