BFG135 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFG135

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 15 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 7000 MHz

Capacitancia de salida (Cc): 1.2 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: TO131

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BFG135 datasheet

 ..1. Size:316K  philips
 bfg135.pdf pdf_icon

BFG135

DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor BFG135 DESCRIPTION PINNING NPN silicon planar epitaxial transistor PIN DESCRIPTION in a plastic SOT223 envelope, lfpage 4 1 emitter intended for wideband amplifier 2 base applications. The small emitt

 ..2. Size:85K  philips
 bfg135 3.pdf pdf_icon

BFG135

DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor 1995 Sep 13 Product specification File under discrete semiconductors, SC14 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 DESCRIPTION PINNING NPN silicon planar epitaxial transistor PIN DESCRIPTION in a plastic SOT223 envelope, age 4 1 emitter intended for wideband amplifier

 0.1. Size:49K  siemens
 bfg135a.pdf pdf_icon

BFG135

BFG 135A NPN Silicon RF Transistor For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 6 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Orderin

Otros transistores... BFE182, BFE193, BFE196, BFE214, BFE215, BFF576, BFF576TO5, BFG134, 2SC5198, BFG16A, BFG17, BFG17A, BFG193, BFG194, BFG195, BFG196, BFG197