BFG135 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFG135
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 15 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 7000 MHz
Capacitancia de salida (Cc): 1.2 pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: TO131
Búsqueda de reemplazo de BFG135
BFG135 Datasheet (PDF)
bfg135.pdf

DISCRETE SEMICONDUCTORS DATA SHEETBFG135NPN 7GHz wideband transistorProduct specification 1995 Sep 13NXP Semiconductors Product specificationNPN 7GHz wideband transistor BFG135DESCRIPTION PINNINGNPN silicon planar epitaxial transistor PIN DESCRIPTIONin a plastic SOT223 envelope, lfpage41 emitterintended for wideband amplifier 2 baseapplications. The small emitt
bfg135 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBFG135NPN 7GHz wideband transistor1995 Sep 13Product specificationFile under discrete semiconductors, SC14Philips Semiconductors Product specificationNPN 7GHz wideband transistor BFG135DESCRIPTION PINNINGNPN silicon planar epitaxial transistorPIN DESCRIPTIONin a plastic SOT223 envelope, age41 emitterintended for wideband amplifier
bfg135a.pdf

BFG 135ANPN Silicon RF Transistor For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 6 GHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Orderin
Otros transistores... BFE182 , BFE193 , BFE196 , BFE214 , BFE215 , BFF576 , BFF576TO5 , BFG134 , 2SC2383Y , BFG16A , BFG17 , BFG17A , BFG193 , BFG194 , BFG195 , BFG196 , BFG197 .



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