BFG135 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG135
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 7000 MHz
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO131
BFG135 Transistor Equivalent Substitute - Cross-Reference Search
BFG135 Datasheet (PDF)
bfg135.pdf
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DISCRETE SEMICONDUCTORS DATA SHEETBFG135NPN 7GHz wideband transistorProduct specification 1995 Sep 13NXP Semiconductors Product specificationNPN 7GHz wideband transistor BFG135DESCRIPTION PINNINGNPN silicon planar epitaxial transistor PIN DESCRIPTIONin a plastic SOT223 envelope, lfpage41 emitterintended for wideband amplifier 2 baseapplications. The small emitt
bfg135 3.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETBFG135NPN 7GHz wideband transistor1995 Sep 13Product specificationFile under discrete semiconductors, SC14Philips Semiconductors Product specificationNPN 7GHz wideband transistor BFG135DESCRIPTION PINNINGNPN silicon planar epitaxial transistorPIN DESCRIPTIONin a plastic SOT223 envelope, age41 emitterintended for wideband amplifier
bfg135a.pdf
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BFG 135ANPN Silicon RF Transistor For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 6 GHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Orderin
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .