BFG135 Specs and Replacement
Type Designator: BFG135
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 7000 MHz
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO131
BFG135 Substitution
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BFG135 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor BFG135 DESCRIPTION PINNING NPN silicon planar epitaxial transistor PIN DESCRIPTION in a plastic SOT223 envelope, lfpage 4 1 emitter intended for wideband amplifier 2 base applications. The small emitt... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor 1995 Sep 13 Product specification File under discrete semiconductors, SC14 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 DESCRIPTION PINNING NPN silicon planar epitaxial transistor PIN DESCRIPTION in a plastic SOT223 envelope, age 4 1 emitter intended for wideband amplifier ... See More ⇒
BFG 135A NPN Silicon RF Transistor For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 6 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Orderin... See More ⇒
Detailed specifications: BFE182, BFE193, BFE196, BFE214, BFE215, BFF576, BFF576TO5, BFG134, 2SC5198, BFG16A, BFG17, BFG17A, BFG193, BFG194, BFG195, BFG196, BFG197
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