All Transistors. BFG135 Datasheet

 

BFG135 Datasheet and Replacement


   Type Designator: BFG135
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 7000 MHz
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO131
 

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BFG135 Datasheet (PDF)

 ..1. Size:316K  philips
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BFG135

DISCRETE SEMICONDUCTORS DATA SHEETBFG135NPN 7GHz wideband transistorProduct specification 1995 Sep 13NXP Semiconductors Product specificationNPN 7GHz wideband transistor BFG135DESCRIPTION PINNINGNPN silicon planar epitaxial transistor PIN DESCRIPTIONin a plastic SOT223 envelope, lfpage41 emitterintended for wideband amplifier 2 baseapplications. The small emitt

 ..2. Size:85K  philips
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BFG135

DISCRETE SEMICONDUCTORSDATA SHEETBFG135NPN 7GHz wideband transistor1995 Sep 13Product specificationFile under discrete semiconductors, SC14Philips Semiconductors Product specificationNPN 7GHz wideband transistor BFG135DESCRIPTION PINNINGNPN silicon planar epitaxial transistorPIN DESCRIPTIONin a plastic SOT223 envelope, age41 emitterintended for wideband amplifier

 0.1. Size:49K  siemens
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BFG135

BFG 135ANPN Silicon RF Transistor For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 6 GHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Orderin

Datasheet: BFE182 , BFE193 , BFE196 , BFE214 , BFE215 , BFF576 , BFF576TO5 , BFG134 , 2SC2383Y , BFG16A , BFG17 , BFG17A , BFG193 , BFG194 , BFG195 , BFG196 , BFG197 .

History: EN4126 | 2SA462

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