BFG135 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG135
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 7000 MHz
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO131
BFG135 Transistor Equivalent Substitute - Cross-Reference Search
BFG135 Datasheet (PDF)
bfg135.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFG135NPN 7GHz wideband transistorProduct specification 1995 Sep 13NXP Semiconductors Product specificationNPN 7GHz wideband transistor BFG135DESCRIPTION PINNINGNPN silicon planar epitaxial transistor PIN DESCRIPTIONin a plastic SOT223 envelope, lfpage41 emitterintended for wideband amplifier 2 baseapplications. The small emitt
bfg135 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG135NPN 7GHz wideband transistor1995 Sep 13Product specificationFile under discrete semiconductors, SC14Philips Semiconductors Product specificationNPN 7GHz wideband transistor BFG135DESCRIPTION PINNINGNPN silicon planar epitaxial transistorPIN DESCRIPTIONin a plastic SOT223 envelope, age41 emitterintended for wideband amplifier
bfg135a.pdf
BFG 135ANPN Silicon RF Transistor For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 6 GHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Orderin
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
