BFG193 Todos los transistores

BFG 193 NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFG 193 BFG193 Q62702-F1291 1 = E 2 = B 3 = E 4 = C SOT-223 Maximum Ratings Parameter Symbol Values Un

isc Silicon NPN RF Transistor BFG193 DESCRIPTION Low Noise Figure NF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHz CE C High Gain S 2 = 13.5 dB TYP. @V = 8 V,I = 30 mA,f = 900 MHz 21e CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.

DISCRETE SEMICONDUCTORS DATA SHEET BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor 1995 Sep 13 Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 Philips Semiconductors Product specification BFG197; BFG197/X; NPN 7 GHz wideband transistor BFG197/XR FEATURES PINNING High power gain PIN DESCRIPTION Low noise figure BF

DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 DESCRIPTION PINNING NPN planar epitaxial transistor in a PIN DESCRIPTION plastic SOT223 envelope, intended fpage 4 1 emitter for wideband amplifier applications. 2 base The device features a

DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor 1995 Sep 12 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 DESCRIPTION PINNING NPN planar epitaxial transistor in a PIN DESCRIPTION plastic SOT223 envelope, intended age 4 1 emitter for wideband amplifier applic

BFG 194 PNP Silicon RF Transistor For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFG 194 BFG194 Q62702-F1321 1 = E 2 = B 3 = E 4 = C SOT-223 Maximum Ratings Param

BFG 196 NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA Power amplifier for DECT and PCN systems fT = 7.5GHz F = 1.5 dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configurat

BFG 19S NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA CECC-type available CECC 50 002/259 ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFG 19S BFG19S Q62702-F1359 1