BFG193 Specs and Replacement

Type Designator: BFG193

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector Current |Ic max|: 0.08 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 8000 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: SOT89

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BFG193 datasheet

 ..1. Size:48K  siemens

bfg193.pdf pdf_icon

BFG193

BFG 193 NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFG 193 BFG193 Q62702-F1291 1 = E 2 = B 3 = E 4 = C SOT-223 Maximum Ratings Parameter Symbol Values Un... See More ⇒

 ..2. Size:209K  inchange semiconductor

bfg193.pdf pdf_icon

BFG193

isc Silicon NPN RF Transistor BFG193 DESCRIPTION Low Noise Figure NF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHz CE C High Gain S 2 = 13.5 dB TYP. @V = 8 V,I = 30 mA,f = 900 MHz 21e CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ... See More ⇒

 9.1. Size:93K  philips

bfg197 bfg197x bfg197xr series 3.pdf pdf_icon

BFG193

DISCRETE SEMICONDUCTORS DATA SHEET BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor 1995 Sep 13 Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 Philips Semiconductors Product specification BFG197; BFG197/X; NPN 7 GHz wideband transistor BFG197/XR FEATURES PINNING High power gain PIN DESCRIPTION Low noise figure BF... See More ⇒

 9.2. Size:293K  philips

bfg198.pdf pdf_icon

BFG193

DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 DESCRIPTION PINNING NPN planar epitaxial transistor in a PIN DESCRIPTION plastic SOT223 envelope, intended fpage 4 1 emitter for wideband amplifier applications. 2 base The device features a ... See More ⇒

Detailed specifications: BFE215, BFF576, BFF576TO5, BFG134, BFG135, BFG16A, BFG17, BFG17A, TIP2955, BFG194, BFG195, BFG196, BFG197, BFG197X, BFG198, BFG19S, BFG23

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