BFG25AX Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFG25AX

Código: V11

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.032 W

Tensión colector-base (Vcb): 8 V

Corriente del colector DC máxima (Ic): 0.0065 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 800 MHz

Ganancia de corriente contínua (hFE): 18

Encapsulados: SOT143

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BFG25AX datasheet

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 bfg25ax.pdf pdf_icon

BFG25AX

DISCRETE SEMICONDUCTORS DATA SHEET BFG25A/X NPN 5 GHz wideband transistor 1997 Oct 29 Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X FEATURES DESCRIPTION Low current consumption NPN silicon wideband transistor in a (100 A to 1 mA) four-lead dua

 8.1. Size:346K  philips
 bfg25aw x.pdf pdf_icon

BFG25AX

DATA SHEET dbook, halfpage M3D123 BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors Product specification 1998 Sep 23 Supersedes data of August 1995 NXP Semiconductors Product specification BFG25AW; NPN 5 GHz wideband transistors BFG25AW/X FEATURES PINNING Low current consumption PIN DESCRIPTION lfpage 4 3 (100 Ato1mA) BFG25AW Low noise figure 1 collector G

 8.2. Size:117K  philips
 bfg25aw bfg25awx 3.pdf pdf_icon

BFG25AX

DATA SHEET book, halfpage M3D123 BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors 1998 Sep 23 Product specification Supersedes data of August 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG25AW; BFG25AW/X FEATURES PINNING Low current consumption PIN DESCRIPTION fpage 4 3 (100 A to 1 mA) BFG25AW Low noise figure 1 collector

Otros transistores... BFG195, BFG196, BFG197, BFG197X, BFG198, BFG19S, BFG23, BFG235, 2N2907, BFG32, BFG33, BFG33X, BFG34, BFG35, BFG51, BFG54, BFG65