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BFG25AX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFG25AX
   Código: V11
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.032 W
   Tensión colector-base (Vcb): 8 V
   Corriente del colector DC máxima (Ic): 0.0065 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 800 MHz
   Ganancia de corriente contínua (hfe): 18
   Paquete / Cubierta: SOT143

 Búsqueda de reemplazo de transistor bipolar BFG25AX

 

BFG25AX Datasheet (PDF)

 ..1. Size:99K  philips
bfg25ax.pdf

BFG25AX
BFG25AX

DISCRETE SEMICONDUCTORSDATA SHEETBFG25A/XNPN 5 GHz wideband transistor1997 Oct 29Product specificationSupersedes data of September 1995File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFG25A/XFEATURES DESCRIPTION Low current consumption NPN silicon wideband transistor in a(100 A to 1 mA) four-lead dua

 8.1. Size:346K  philips
bfg25aw x.pdf

BFG25AX
BFG25AX

DATA SHEETdbook, halfpageM3D123BFG25AW; BFG25AW/XNPN 5 GHz wideband transistorsProduct specification 1998 Sep 23Supersedes data of August 1995NXP Semiconductors Product specificationBFG25AW;NPN 5 GHz wideband transistorsBFG25AW/XFEATURES PINNING Low current consumption PIN DESCRIPTIONlfpage4 3(100 Ato1mA)BFG25AW Low noise figure1 collector G

 8.2. Size:117K  philips
bfg25aw bfg25awx 3.pdf

BFG25AX
BFG25AX

DATA SHEETbook, halfpageM3D123BFG25AW; BFG25AW/XNPN 5 GHz wideband transistors1998 Sep 23Product specificationSupersedes data of August 1995Philips Semiconductors Product specificationNPN 5 GHz wideband transistors BFG25AW; BFG25AW/XFEATURES PINNING Low current consumptionPIN DESCRIPTIONfpage4 3(100 A to 1 mA)BFG25AW Low noise figure1 collector

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History: BDT32F | ACY50 | 2N6654 | SLA4061 | 2SD801 | 2SD882SQ-Q | AD-BC847-A

 

 
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