BFG25AX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFG25AX
Código: V11
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.032 W
Tensión colector-base (Vcb): 8 V
Corriente del colector DC máxima (Ic): 0.0065 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 800 MHz
Ganancia de corriente contínua (hfe): 18
Paquete / Cubierta: SOT143
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BFG25AX Datasheet (PDF)
bfg25ax.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETBFG25A/XNPN 5 GHz wideband transistor1997 Oct 29Product specificationSupersedes data of September 1995File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFG25A/XFEATURES DESCRIPTION Low current consumption NPN silicon wideband transistor in a(100 A to 1 mA) four-lead dua
bfg25aw x.pdf
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DATA SHEETdbook, halfpageM3D123BFG25AW; BFG25AW/XNPN 5 GHz wideband transistorsProduct specification 1998 Sep 23Supersedes data of August 1995NXP Semiconductors Product specificationBFG25AW;NPN 5 GHz wideband transistorsBFG25AW/XFEATURES PINNING Low current consumption PIN DESCRIPTIONlfpage4 3(100 Ato1mA)BFG25AW Low noise figure1 collector G
bfg25aw bfg25awx 3.pdf
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DATA SHEETbook, halfpageM3D123BFG25AW; BFG25AW/XNPN 5 GHz wideband transistors1998 Sep 23Product specificationSupersedes data of August 1995Philips Semiconductors Product specificationNPN 5 GHz wideband transistors BFG25AW; BFG25AW/XFEATURES PINNING Low current consumptionPIN DESCRIPTIONfpage4 3(100 A to 1 mA)BFG25AW Low noise figure1 collector
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .