BFG25AX Specs and Replacement
Type Designator: BFG25AX
SMD Transistor Code: V11
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.032 W
Maximum Collector-Base Voltage |Vcb|: 8 V
Maximum Collector Current |Ic max|: 0.0065 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 800 MHz
Forward Current Transfer Ratio (hFE), MIN: 18
Package: SOT143
BFG25AX Substitution
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BFG25AX datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BFG25A/X NPN 5 GHz wideband transistor 1997 Oct 29 Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X FEATURES DESCRIPTION Low current consumption NPN silicon wideband transistor in a (100 A to 1 mA) four-lead dua... See More ⇒
DATA SHEET dbook, halfpage M3D123 BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors Product specification 1998 Sep 23 Supersedes data of August 1995 NXP Semiconductors Product specification BFG25AW; NPN 5 GHz wideband transistors BFG25AW/X FEATURES PINNING Low current consumption PIN DESCRIPTION lfpage 4 3 (100 Ato1mA) BFG25AW Low noise figure 1 collector G... See More ⇒
DATA SHEET book, halfpage M3D123 BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors 1998 Sep 23 Product specification Supersedes data of August 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG25AW; BFG25AW/X FEATURES PINNING Low current consumption PIN DESCRIPTION fpage 4 3 (100 A to 1 mA) BFG25AW Low noise figure 1 collector ... See More ⇒
Detailed specifications: BFG195, BFG196, BFG197, BFG197X, BFG198, BFG19S, BFG23, BFG235, 2N2907, BFG32, BFG33, BFG33X, BFG34, BFG35, BFG51, BFG54, BFG65
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