BFG67 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFG67
Código: V3
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 10 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 7500 MHz
Capacitancia de salida (Cc): 0.5 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO251
Búsqueda de reemplazo de transistor bipolar BFG67
BFG67 Datasheet (PDF)
bfg67 bfg67x bfg67xr 4.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETBFG67; BFG67/X; BFG67/XRNPN 8 GHz wideband transistors1998 Oct 02Product specificationSupersedes data of September 1995Philips Semiconductors Product specificationNPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XRFEATURES PINNING High power gainDESCRIPTIONPIN Low noise figureBFG67 BFG67/X BFG67/XR High transition freq
bfg67 x xr n.pdf
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BFG67; BFG67/X; BFG67/XRNPN 8 GHz wideband transistorsRev. 05 23 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links
bfg67.pdf
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SMD Type TransistorsNPN TransistorsBFG67 (KFG67)SOT-143 Unit:mm2.900.1 1.300.1X Features Collector Current Capability IC=50mA0~0.1 Collector Emitter Voltage VCEO=10V2.300.21.90 (Typ) 0.48 (max) High power gain0.38 (min) 4 3 Low noise figure High transition frequency1 20.45 (max) 0.88 (max) 0.15 (min) detail X1.70 (Typ)
bfg67w bfg67wx bfg67wxr 2.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETBFG67WBFG67W/X; BFG67W/XRNPN 8 GHz wideband transistorAugust 1995Product specificationFile under Discrete Semiconductors, SC14Philips SemiconductorsPhilips Semiconductors Product specificationBFG67WNPN 8 GHz wideband transistorBFG67W/X; BFG67W/XRFEATURES MARKING High power gainTYPE NUMBER CODE Low noise figureBFG67W V2f
bfg67x.pdf
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SMD Type TransistorsNPN TransistorsBFG67X (KFG67X)SOT-143 Unit:mm2.900.1 1.300.1X Features Collector Current Capability IC=50mA0~0.1 Collector Emitter Voltage VCEO=10V2.300.21.90 (Typ) 0.48 (max) High power gain0.38 (min) 4 3 Low noise figure High transition frequency1 20.45 (max) 0.88 (max) 0.15 (min) detail X1.70 (Ty
bfg67r.pdf
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SMD Type TransistorsNPN TransistorsBFG67R (KFG67R)Unit:mmSOT-143R2.900.1 1.300.1X Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=10V0~0.1 2.300.2 High power gain 1.90 (Typ) 0.48 (max) 0.38 (min) Low noise figure3 40.350.1 High transition frequency2 10.55 (max) 0.88 (max) 0.25 (min) detail
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .