BFG67 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFG67

Código: V3

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 10 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 7500 MHz

Capacitancia de salida (Cc): 0.5 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO251

 Búsqueda de reemplazo de BFG67

- Selecciónⓘ de transistores por parámetros

 

BFG67 datasheet

 ..1. Size:110K  philips
bfg67 bfg67x bfg67xr 4.pdf pdf_icon

BFG67

DISCRETE SEMICONDUCTORS DATA SHEET BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors 1998 Oct 02 Product specification Supersedes data of September 1995 Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR FEATURES PINNING High power gain DESCRIPTION PIN Low noise figure BFG67 BFG67/X BFG67/XR High transition freq

 ..2. Size:287K  philips
bfg67 x xr n.pdf pdf_icon

BFG67

BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Rev. 05 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links

 ..3. Size:1712K  kexin
bfg67.pdf pdf_icon

BFG67

SMD Type Transistors NPN Transistors BFG67 (KFG67) SOT-143 Unit mm 2.90 0.1 1.30 0.1 X Features Collector Current Capability IC=50mA 0 0.1 Collector Emitter Voltage VCEO=10V 2.30 0.2 1.90 (Typ) 0.48 (max) High power gain 0.38 (min) 4 3 Low noise figure High transition frequency 1 2 0.45 (max) 0.88 (max) 0.15 (min) detail X 1.70 (Typ)

 0.1. Size:102K  philips
bfg67w bfg67wx bfg67wxr 2.pdf pdf_icon

BFG67

DISCRETE SEMICONDUCTORS DATA SHEET BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor August 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Philips Semiconductors Product specification BFG67W NPN 8 GHz wideband transistor BFG67W/X; BFG67W/XR FEATURES MARKING High power gain TYPE NUMBER CODE Low noise figure BFG67W V2 f

Otros transistores... BFG33, BFG33X, BFG34, BFG35, BFG51, BFG54, BFG65, BFG65T, B647, BFG67X, BFG90A, BFG91A, BFG92A, BFG92AX, BFG93A, BFG93AX, BFG94