BFN18 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFN18
Código: DE
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar BFN18
BFN18 Datasheet (PDF)
bfn16 bfn18.pdf
NPN Silicon High-Voltage Transistors BFN 16BFN 18 Suitable for video output stages in TV setsand switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN 17, BFN 19 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BFN 16 DD Q62702-F885 B C E SOT-89BFN 18 DE Q62702-F1056Maximum Ratings
bfn18.pdf
SOT89 NPN SILICON PLANARBFN18HIGH VOLTAGE TRANSISTORISSUE 3 - JANUARY 1996 COMPLEMENTARY TYPE - BFN19CPARTMARKING DETAIL - DEECBABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO 300 VCollector-Emitter Voltage VCEO 300 VEmitter-Base Voltage VEBO 5VPeak pulse Current ICM 500 mAContinuous Collector Current IC 200 mABase Current IB 100
bfn18.pdf
BFN18NPN Silicon High-Voltage TransistorsData SheetRevision 1.0, 2010-10-13RF & Protection DevicesEdition 2010-10-13Published byInfineon Technologies AG81726 Munich, Germany 2010 Infineon Technologies AGAll Rights Reserved.Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respec
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
