BFN18 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFN18

Código: DE

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 200 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 60 MHz

Ganancia de corriente contínua (hFE): 40

Encapsulados: SOT89

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BFN18 datasheet

 ..1. Size:138K  siemens
 bfn16 bfn18.pdf pdf_icon

BFN18

NPN Silicon High-Voltage Transistors BFN 16 BFN 18 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types BFN 17, BFN 19 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BFN 16 DD Q62702-F885 B C E SOT-89 BFN 18 DE Q62702-F1056 Maximum Ratings

 ..2. Size:12K  diodes
 bfn18.pdf pdf_icon

BFN18

SOT89 NPN SILICON PLANAR BFN18 HIGH VOLTAGE TRANSISTOR ISSUE 3 - JANUARY 1996 COMPLEMENTARY TYPE - BFN19 C PARTMARKING DETAIL - DE E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5V Peak pulse Current ICM 500 mA Continuous Collector Current IC 200 mA Base Current IB 100

 ..3. Size:1126K  infineon
 bfn18.pdf pdf_icon

BFN18

BFN18 NPN Silicon High-Voltage Transistors Data Sheet Revision 1.0, 2010-10-13 RF & Protection Devices Edition 2010-10-13 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respec

Otros transistores... BFJ77, BFJ78, BFJ79, BFJ92, BFJ93, BFJ98, BFN16, BFN17, S8550, BFN19, BFN20, BFN21, BFN22, BFN22R, BFN23, BFN23R, BFN24