BFN18 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFN18
SMD Transistor Code: DE
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT89
BFN18 Transistor Equivalent Substitute - Cross-Reference Search
BFN18 Datasheet (PDF)
bfn16 bfn18.pdf
NPN Silicon High-Voltage Transistors BFN 16BFN 18 Suitable for video output stages in TV setsand switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN 17, BFN 19 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BFN 16 DD Q62702-F885 B C E SOT-89BFN 18 DE Q62702-F1056Maximum Ratings
bfn18.pdf
SOT89 NPN SILICON PLANARBFN18HIGH VOLTAGE TRANSISTORISSUE 3 - JANUARY 1996 COMPLEMENTARY TYPE - BFN19CPARTMARKING DETAIL - DEECBABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO 300 VCollector-Emitter Voltage VCEO 300 VEmitter-Base Voltage VEBO 5VPeak pulse Current ICM 500 mAContinuous Collector Current IC 200 mABase Current IB 100
bfn18.pdf
BFN18NPN Silicon High-Voltage TransistorsData SheetRevision 1.0, 2010-10-13RF & Protection DevicesEdition 2010-10-13Published byInfineon Technologies AG81726 Munich, Germany 2010 Infineon Technologies AGAll Rights Reserved.Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respec
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
