BFP181T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BFP 181WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA fT = 8GHz F = 1.45dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 181W RFs Q62702-F1501 1 = E 2 = C 3 = E 4 = B SOT-343Maximum RatingsParameter Symbol Valu

BFP 181NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA fT = 8GHz F = 1.45dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 181 RFs Q62702-F1271 1 = C 2 = E 3 = B 4 = E SOT-143Maximum RatingsParameter Symbol Values

BFP 181RNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA fT = 8GHz F = 1.45dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 181R RFs Q62702-F1685 1 = E 2 = C 3 = E 4 = B SOT-143RMaximum RatingsParameter Symbol Val

BFP181Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 0.5 mA to 12 mA241 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Config