BFP181T Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFP181T

Código: 18

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.16 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 10 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 0.02 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 8000 MHz

Capacitancia de salida (Cc): 0.3 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: SOT143

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BFP181T datasheet

 8.1. Size:59K  siemens
 bfp181w.pdf pdf_icon

BFP181T

BFP 181W NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA fT = 8GHz F = 1.45dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 181W RFs Q62702-F1501 1 = E 2 = C 3 = E 4 = B SOT-343 Maximum Ratings Parameter Symbol Valu

 8.2. Size:60K  siemens
 bfp181.pdf pdf_icon

BFP181T

BFP 181 NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA fT = 8GHz F = 1.45dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 181 RFs Q62702-F1271 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Parameter Symbol Values

 8.3. Size:58K  siemens
 bfp181r.pdf pdf_icon

BFP181T

BFP 181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA fT = 8GHz F = 1.45dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 181R RFs Q62702-F1685 1 = E 2 = C 3 = E 4 = B SOT-143R Maximum Ratings Parameter Symbol Val

 8.4. Size:548K  infineon
 bfp181.pdf pdf_icon

BFP181T

BFP181 Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA 2 4 1 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Config

MOSTRAR MÁS

Otros transistores... BFP10, BFP11, BFP12, BFP13, BFP14, BFP17, BFP180, BFP181, A1013, BFP182, BFP182T, BFP183, BFP183T, BFP193, BFP194, BFP194W, BFP22