BFP193 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BFP 193NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 193 RCs Q62702-F1282 1 = C 2 = E 3 = B 4 = E SOT-143Maximum RatingsParameter Symbol Values Unit

BFP193Low Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz3 For linear broadband amplifiers 24 fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration Pa

BFP 193WNPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 193W RCs Q62702-F1577 1 = E 2 = C 3 = E 4 = B SOT-343Maximum RatingsParameter Symbol Values Uni

BFP193WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz3 For linear broadband amplifiers241 fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration

BFP 196NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA Power amplifier for DECT and PCN systems fT = 7.5GHz F = 1.5 dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configurat

BFP 194PNP Silicon RF Transistor For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mAESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 194 RKs Q62702-F1347 1 = C 2 = E 3 = B 4 = E SOT-143Maximum RatingsParamete

BFP 196WNPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA Power amplifier for DECT and PCN systems fT = 7.5GHz F = 1.5 dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configura

BFP196Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband3 amplifiers in antenna and telecommunications24 systems up to 1.5 GHz at collector currents from1 20 mA to 80 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101

BFP196WLow Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband3 amplifiers in antenna and telecommunications24 systems up to 1.5 GHz at collector currents from1 20 mA to 80 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qual

isc Silicon NPN RF Transistor BFP196WDESCRIPTIONLow Noise FigureNF = 1.3 dB TYP.@V = 6 V, I = 5 mA, f = 1GHzCE CHigh GainS 2 = 18dB TYP.21@V = 6 V,I = 30 mA,f = 1GHzCE CMinimum Lot-to-Lot variations for robustdevice performance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gainamplifiers and linear broadband amplifiers.ABSOLU