BFP193 Specs and Replacement
Type Designator: BFP193
SMD Transistor Code: RCs
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 12 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3500 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT143
- BJT ⓘ Cross-Reference Search
BFP193 datasheet
..1. Size:60K siemens
bfp193.pdf 

BFP 193 NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 193 RCs Q62702-F1282 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Parameter Symbol Values Unit ... See More ⇒
..2. Size:544K infineon
bfp193.pdf 

BFP193 Low Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz 3 For linear broadband amplifiers 2 4 fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Pa... See More ⇒
0.1. Size:59K siemens
bfp193w.pdf 

BFP 193W NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 193W RCs Q62702-F1577 1 = E 2 = C 3 = E 4 = B SOT-343 Maximum Ratings Parameter Symbol Values Uni... See More ⇒
0.2. Size:531K infineon
bfp193w.pdf 

BFP193W Low Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz 3 For linear broadband amplifiers 2 4 1 fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration... See More ⇒
9.1. Size:60K siemens
bfp196.pdf 

BFP 196 NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA Power amplifier for DECT and PCN systems fT = 7.5GHz F = 1.5 dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configurat... See More ⇒
9.2. Size:60K siemens
bfp194.pdf 

BFP 194 PNP Silicon RF Transistor For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 194 RKs Q62702-F1347 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Paramete... See More ⇒
9.3. Size:60K siemens
bfp196w.pdf 

BFP 196W NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA Power amplifier for DECT and PCN systems fT = 7.5GHz F = 1.5 dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configura... See More ⇒
9.4. Size:551K infineon
bfp196.pdf 

BFP196 Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 ... See More ⇒
9.5. Size:546K infineon
bfp196w.pdf 

BFP196W Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qual... See More ⇒
9.6. Size:220K inchange semiconductor
bfp196w.pdf 

isc Silicon NPN RF Transistor BFP196W DESCRIPTION Low Noise Figure NF = 1.3 dB TYP. @V = 6 V, I = 5 mA, f = 1GHz CE C High Gain S 2 = 18dB TYP. 21 @V = 6 V,I = 30 mA,f = 1GHz CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLU... See More ⇒
Detailed specifications: BFP17, BFP180, BFP181, BFP181T, BFP182, BFP182T, BFP183, BFP183T, 13005, BFP194, BFP194W, BFP22, BFP23, BFP24, BFP25, BFP26, BFP280
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