BFP521V Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFP521V

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 70

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BFP521V datasheet

 9.1. Size:48K  siemens
 bfp520.pdf pdf_icon

BFP521V

SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 VPS05605 Gold metalization for high reliability SIEGET 45 - Line Siemens Grounded Emitter Transistor 45 GHz

 9.2. Size:224K  infineon
 bfp520f.pdf pdf_icon

BFP521V

BFP520F Low profile high gain silicon NPN RF bipolar transistor Product description The BFP520F is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineon s established fifth generation RF bipolar transistor family. Its transition frequency fT of 45 GHz, high gain and low noise make the device suitable for applications up to 15 GHz. It remains cost competitiv

Otros transistores... BFP520II, BFP520V, BFP520VI, BFP521, BFP521I, BFP521II, BFP521III, BFP521IV, D882P, BFP619, BFP620, BFP621, BFP67, BFP67R, BFP67W, BFP81, BFP90