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BFP521V . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFP521V
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 70
 

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BFP521V Datasheet (PDF)

 9.1. Size:48K  siemens
 bfp520.pdf pdf_icon

BFP521V

SIEGET 45BFP 520NPN Silicon RF TransistorPreliminary data3 For highest gain low noise amplifier4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz1 VPS05605 Gold metalization for high reliability SIEGET 45 - Line Siemens Grounded Emitter Transistor 45 GHz

 9.2. Size:224K  infineon
 bfp520f.pdf pdf_icon

BFP521V

BFP520FLow profile high gain silicon NPN RF bipolar transistorProduct descriptionThe BFP520F is a low noise device based on a grounded emitter (SIEGET) that is part ofInfineons established fifth generation RF bipolar transistor family. Its transitionfrequency fT of 45 GHz, high gain and low noise make the device suitable for applicationsup to 15 GHz. It remains cost competitiv

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History: KTC3208 | BFS22Q | 2SC1723 | KT201BM | BF273D | MPQ2907 | KSA642

 

 
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