BFP521V Specs and Replacement
Type Designator: BFP521V
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
BFP521V Substitution
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BFP521V datasheet
SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 VPS05605 Gold metalization for high reliability SIEGET 45 - Line Siemens Grounded Emitter Transistor 45 GHz... See More ⇒
BFP520F Low profile high gain silicon NPN RF bipolar transistor Product description The BFP520F is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineon s established fifth generation RF bipolar transistor family. Its transition frequency fT of 45 GHz, high gain and low noise make the device suitable for applications up to 15 GHz. It remains cost competitiv... See More ⇒
Detailed specifications: BFP520II, BFP520V, BFP520VI, BFP521, BFP521I, BFP521II, BFP521III, BFP521IV, D882P, BFP619, BFP620, BFP621, BFP67, BFP67R, BFP67W, BFP81, BFP90
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