BFQ54T Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFQ54T

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 18 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 180 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4500 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO50

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BFQ54T datasheet

 9.1. Size:238K  philips
 bfq540 n.pdf pdf_icon

BFQ54T

BFQ540 NPN wideband transistor Rev. 04 25 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http

 9.2. Size:62K  philips
 bfq540 3.pdf pdf_icon

BFQ54T

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BFQ540 NPN wideband transistor Product specification 2000 May 23 Supersedes data of 1998 Aug 27 Philips Semiconductors Product specification NPN wideband transistor BFQ540 FEATURES DESCRIPTION High gain NPN wideband transistor in a SOT89 plastic package. High output voltage page Low noise PINNING Gold met

 9.3. Size:208K  inchange semiconductor
 bfq540.pdf pdf_icon

BFQ54T

isc Silicon NPN RF Transistor BFQ540 DESCRIPTION High Gain High Output Voltage Low Noise Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF, UHF and CATV amplifiers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V CBO V Collector-Emitter Voltage 15 V CES

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