BFQ54T Datasheet and Replacement
Type Designator: BFQ54T
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 180 °C
Transition Frequency (ft): 4500 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO50
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BFQ54T Datasheet (PDF)
bfq540 n.pdf

BFQ540NPN wideband transistorRev. 04 25 September 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.http:
bfq540 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BFQ540NPN wideband transistorProduct specification 2000 May 23Supersedes data of 1998 Aug 27Philips Semiconductors Product specificationNPN wideband transistor BFQ540FEATURES DESCRIPTION High gain NPN wideband transistor in a SOT89plastic package. High output voltagepage Low noisePINNING Gold met
bfq540.pdf

isc Silicon NPN RF Transistor BFQ540DESCRIPTIONHigh GainHigh Output VoltageLow NoiseMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF, UHF and CATV amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBOV Collector-Emitter Voltage 15 VCES
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: D11C1053 | UN621K | KRA567U | ZTX300 | CHDTA115TEGP | BD544D | MJ16008
Keywords - BFQ54T transistor datasheet
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History: D11C1053 | UN621K | KRA567U | ZTX300 | CHDTA115TEGP | BD544D | MJ16008



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