BFQ54T Specs and Replacement
Type Designator: BFQ54T
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 180 °C
Electrical Characteristics
Transition Frequency (ft): 4500 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO50
BFQ54T Substitution
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BFQ54T datasheet
BFQ540 NPN wideband transistor Rev. 04 25 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http ... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BFQ540 NPN wideband transistor Product specification 2000 May 23 Supersedes data of 1998 Aug 27 Philips Semiconductors Product specification NPN wideband transistor BFQ540 FEATURES DESCRIPTION High gain NPN wideband transistor in a SOT89 plastic package. High output voltage page Low noise PINNING Gold met... See More ⇒
isc Silicon NPN RF Transistor BFQ540 DESCRIPTION High Gain High Output Voltage Low Noise Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF, UHF and CATV amplifiers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V CBO V Collector-Emitter Voltage 15 V CES ... See More ⇒
Detailed specifications: BFQ42, BFQ43, BFQ43S, BFQ51, BFQ51C, BFQ52, BFQ53, BFQ54, TIP120, BFQ56, BFQ57, BFQ58, BFQ59, BFQ60, BFQ61, BFQ62, BFQ63
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History: FHT9014G | GP145 | FHT9013Y-ME | NSS40600CF8T1G | NSS40301MZ4T3G | NSS40301MZ4T1G
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