All Transistors. BFQ54T Datasheet

 

BFQ54T Datasheet and Replacement


   Type Designator: BFQ54T
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 180 °C
   Transition Frequency (ft): 4500 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO50
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BFQ54T Datasheet (PDF)

 9.1. Size:238K  philips
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BFQ54T

BFQ540NPN wideband transistorRev. 04 25 September 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.http:

 9.2. Size:62K  philips
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BFQ54T

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BFQ540NPN wideband transistorProduct specification 2000 May 23Supersedes data of 1998 Aug 27Philips Semiconductors Product specificationNPN wideband transistor BFQ540FEATURES DESCRIPTION High gain NPN wideband transistor in a SOT89plastic package. High output voltagepage Low noisePINNING Gold met

 9.3. Size:208K  inchange semiconductor
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BFQ54T

isc Silicon NPN RF Transistor BFQ540DESCRIPTIONHigh GainHigh Output VoltageLow NoiseMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF, UHF and CATV amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBOV Collector-Emitter Voltage 15 VCES

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: D11C1053 | UN621K | KRA567U | ZTX300 | CHDTA115TEGP | BD544D | MJ16008

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