All Transistors. BFQ54T Datasheet

 

BFQ54T Datasheet and Replacement


   Type Designator: BFQ54T
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 180 °C
   Transition Frequency (ft): 4500 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO50
 

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BFQ54T Datasheet (PDF)

 9.1. Size:238K  philips
 bfq540 n.pdf pdf_icon

BFQ54T

BFQ540NPN wideband transistorRev. 04 25 September 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.http:

 9.2. Size:62K  philips
 bfq540 3.pdf pdf_icon

BFQ54T

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BFQ540NPN wideband transistorProduct specification 2000 May 23Supersedes data of 1998 Aug 27Philips Semiconductors Product specificationNPN wideband transistor BFQ540FEATURES DESCRIPTION High gain NPN wideband transistor in a SOT89plastic package. High output voltagepage Low noisePINNING Gold met

 9.3. Size:208K  inchange semiconductor
 bfq540.pdf pdf_icon

BFQ54T

isc Silicon NPN RF Transistor BFQ540DESCRIPTIONHigh GainHigh Output VoltageLow NoiseMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF, UHF and CATV amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBOV Collector-Emitter Voltage 15 VCES

Datasheet: BFQ42 , BFQ43 , BFQ43S , BFQ51 , BFQ51C , BFQ52 , BFQ53 , BFQ54 , MPSA42 , BFQ56 , BFQ57 , BFQ58 , BFQ59 , BFQ60 , BFQ61 , BFQ62 , BFQ63 .

History: MRF314A | 2SA271 | MRF261 | 2SB817D | SD1429 | PBSS5330PA | 2SC3946

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