BFQ54T Datasheet, Equivalent, Cross Reference Search
Type Designator: BFQ54T
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 180 °C
Transition Frequency (ft): 4500 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO50
BFQ54T Transistor Equivalent Substitute - Cross-Reference Search
BFQ54T Datasheet (PDF)
bfq540 n.pdf
BFQ540NPN wideband transistorRev. 04 25 September 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.http:
bfq540 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BFQ540NPN wideband transistorProduct specification 2000 May 23Supersedes data of 1998 Aug 27Philips Semiconductors Product specificationNPN wideband transistor BFQ540FEATURES DESCRIPTION High gain NPN wideband transistor in a SOT89plastic package. High output voltagepage Low noisePINNING Gold met
bfq540.pdf
isc Silicon NPN RF Transistor BFQ540DESCRIPTIONHigh GainHigh Output VoltageLow NoiseMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF, UHF and CATV amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBOV Collector-Emitter Voltage 15 VCES
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
