BFQ67 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFQ67
Código: V2_V2p
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.18 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 10 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 7500 MHz
Capacitancia de salida (Cc): 0.5 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BFQ67
BFQ67 Datasheet (PDF)
bfq67 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BFQ67NPN 8 GHz wideband transistor1998 Aug 27Product specificationSupersedes data of September 1995File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 8 GHz wideband transistor BFQ67FEATURES DESCRIPTION High power gain Silicon NPN wideband transistor in aalfpage 3plastic SO
bfq67.pdf
DISCRETE SEMICONDUCTORS DATA SHEETbook, halfpageM3D088BFQ67NPN 8 GHz wideband transistorProduct specification 1998 Aug 27Supersedes data of September 1995NXP Semiconductors Product specificationNPN 8 GHz wideband transistor BFQ67FEATURES DESCRIPTION High power gain Silicon NPN wideband transistor in a alfpage 3plastic SOT23 package. Low noise figure High
bfq67.pdf
SMD Type TransistorsNPN TransistorsBFQ67 (KFQ67)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=10V 1 2+0.1+0.050.95-0.1 0.1-0.01 High power gain+0.11.9-0.1 Low noise figure High transition frequency1.Base2.Emitter3.collector Absolute Maximum Ratings Ta
bfq67t 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173BFQ67TNPN 8 GHz wideband transistorProduct specification 2000 Mar 06Supersedes data of 1999 Nov 02Philips Semiconductors Product specificationNPN 8 GHz wideband transistor BFQ67TFEATURES DESCRIPTION High power gain NPN transistor in a plastic SOT416(SC-75) package. Low noise figure3fpage High transition frequencyPI
bfq67w cnv 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFQ67WNPN 8 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 8 GHz wideband transistor BFQ67WFEATURES PINNING High power gainPIN DESCRIPTION Low noise figureCode: V2 High transition frequency1 basehandbook, 2 columns3
bfq67w cnv.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFQ67WNPN 8 GHz wideband transistorProduct specification September 1995NXP Semiconductors Product specificationNPN 8 GHz wideband transistor BFQ67WFEATURES PINNING High power gainPIN DESCRIPTION Low noise figureCode: V2 High transition frequency31 base handbook, 2 columns Gold metallization ensures 2 emitterexcell
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
