BFQ67 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFQ67

Código: V2_V2p

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.18 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 10 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 7500 MHz

Capacitancia de salida (Cc): 0.5 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT23

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BFQ67 datasheet

 ..1. Size:85K  philips
 bfq67 4.pdf pdf_icon

BFQ67

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFQ67 NPN 8 GHz wideband transistor 1998 Aug 27 Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION High power gain Silicon NPN wideband transistor in a alfpage 3 plastic SO

 ..2. Size:248K  philips
 bfq67.pdf pdf_icon

BFQ67

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFQ67 NPN 8 GHz wideband transistor Product specification 1998 Aug 27 Supersedes data of September 1995 NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION High power gain Silicon NPN wideband transistor in a alfpage 3 plastic SOT23 package. Low noise figure High

 ..3. Size:1451K  kexin
 bfq67.pdf pdf_icon

BFQ67

SMD Type Transistors NPN Transistors BFQ67 (KFQ67) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=10V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 High power gain +0.1 1.9-0.1 Low noise figure High transition frequency 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta

 0.1. Size:98K  philips
 bfq67t 2.pdf pdf_icon

BFQ67

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFQ67T NPN 8 GHz wideband transistor Product specification 2000 Mar 06 Supersedes data of 1999 Nov 02 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T FEATURES DESCRIPTION High power gain NPN transistor in a plastic SOT416 (SC-75) package. Low noise figure 3 fpage High transition frequency PI

MOSTRAR MÁS

Otros transistores... BFQ61, BFQ62, BFQ63, BFQ64, BFQ645, BFQ64P, BFQ65, BFQ66, C945, BFQ67W, BFQ68, BFQ69, BFQ70, BFQ71, BFQ72, BFQ73, BFQ73S