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BFQ67W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFQ67W
   Código: V2_WV2
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.18 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 10 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 7500 MHz
   Capacitancia de salida (Cc): 0.5 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT23
 

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BFQ67W Datasheet (PDF)

 ..1. Size:79K  philips
bfq67w cnv 3.pdf pdf_icon

BFQ67W

DISCRETE SEMICONDUCTORSDATA SHEETBFQ67WNPN 8 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 8 GHz wideband transistor BFQ67WFEATURES PINNING High power gainPIN DESCRIPTION Low noise figureCode: V2 High transition frequency1 basehandbook, 2 columns3

 ..2. Size:250K  philips
bfq67w cnv.pdf pdf_icon

BFQ67W

DISCRETE SEMICONDUCTORS DATA SHEETBFQ67WNPN 8 GHz wideband transistorProduct specification September 1995NXP Semiconductors Product specificationNPN 8 GHz wideband transistor BFQ67WFEATURES PINNING High power gainPIN DESCRIPTION Low noise figureCode: V2 High transition frequency31 base handbook, 2 columns Gold metallization ensures 2 emitterexcell

 9.1. Size:98K  philips
bfq67t 2.pdf pdf_icon

BFQ67W

DISCRETE SEMICONDUCTORSDATA SHEETM3D173BFQ67TNPN 8 GHz wideband transistorProduct specification 2000 Mar 06Supersedes data of 1999 Nov 02Philips Semiconductors Product specificationNPN 8 GHz wideband transistor BFQ67TFEATURES DESCRIPTION High power gain NPN transistor in a plastic SOT416(SC-75) package. Low noise figure3fpage High transition frequencyPI

 9.2. Size:85K  philips
bfq67 4.pdf pdf_icon

BFQ67W

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BFQ67NPN 8 GHz wideband transistor1998 Aug 27Product specificationSupersedes data of September 1995File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 8 GHz wideband transistor BFQ67FEATURES DESCRIPTION High power gain Silicon NPN wideband transistor in aalfpage 3plastic SO

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 3CG111

 

 
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