BFQ67W
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFQ67W
Código: V2_WV2
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.18
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 10
V
Tensión emisor-base (Veb): 2
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 7500
MHz
Capacitancia de salida (Cc): 0.5
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar BFQ67W
BFQ67W
Datasheet (PDF)
..1. Size:79K philips
bfq67w cnv 3.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETBFQ67WNPN 8 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 8 GHz wideband transistor BFQ67WFEATURES PINNING High power gainPIN DESCRIPTION Low noise figureCode: V2 High transition frequency1 basehandbook, 2 columns3
..2. Size:250K philips
bfq67w cnv.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFQ67WNPN 8 GHz wideband transistorProduct specification September 1995NXP Semiconductors Product specificationNPN 8 GHz wideband transistor BFQ67WFEATURES PINNING High power gainPIN DESCRIPTION Low noise figureCode: V2 High transition frequency31 base handbook, 2 columns Gold metallization ensures 2 emitterexcell
9.1. Size:98K philips
bfq67t 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173BFQ67TNPN 8 GHz wideband transistorProduct specification 2000 Mar 06Supersedes data of 1999 Nov 02Philips Semiconductors Product specificationNPN 8 GHz wideband transistor BFQ67TFEATURES DESCRIPTION High power gain NPN transistor in a plastic SOT416(SC-75) package. Low noise figure3fpage High transition frequencyPI
9.2. Size:85K philips
bfq67 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BFQ67NPN 8 GHz wideband transistor1998 Aug 27Product specificationSupersedes data of September 1995File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 8 GHz wideband transistor BFQ67FEATURES DESCRIPTION High power gain Silicon NPN wideband transistor in aalfpage 3plastic SO
9.3. Size:248K philips
bfq67.pdf
DISCRETE SEMICONDUCTORS DATA SHEETbook, halfpageM3D088BFQ67NPN 8 GHz wideband transistorProduct specification 1998 Aug 27Supersedes data of September 1995NXP Semiconductors Product specificationNPN 8 GHz wideband transistor BFQ67FEATURES DESCRIPTION High power gain Silicon NPN wideband transistor in a alfpage 3plastic SOT23 package. Low noise figure High
9.4. Size:1451K kexin
bfq67.pdf
SMD Type TransistorsNPN TransistorsBFQ67 (KFQ67)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=10V 1 2+0.1+0.050.95-0.1 0.1-0.01 High power gain+0.11.9-0.1 Low noise figure High transition frequency1.Base2.Emitter3.collector Absolute Maximum Ratings Ta
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