BFR182 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFR182
Código: RGs
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 20 V
Corriente del colector DC máxima (Ic): 0.035 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8000 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BFR182
BFR182 Datasheet (PDF)
bfr182.pdf
BFR 182NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 182 RGs Q62702-F1315 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCol
bfr182.pdf
BFR182Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration Packag
bfr182t bfr182tw.pdf
BFR182T/BFR182TWVishay TelefunkenSilicon NPN Planar RF TransistorElectrostatic sensitive device. Observe precautions for handling. ApplicationsFor low noise and high gain broadband amplifiers atcollector currents from 1 mA to 20 mA.FeaturesD Low noise figureD High power gain1 113 652 13 57013 58194 92802 323BFR182T Marking: RG BFR182TW Marking: WRGPlastic cas
bfr182w.pdf
BFR 182WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 182W RGs Q62702-F1492 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values Unit
bfr182w.pdf
BFR182WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA3 21 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling pre
bfr182tw.pdf
isc Silicon NPN RF Transistor BFR182TWDESCRIPTIONLow Voltage UseUltra Super Mini Mold PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise and small signal amplifiersfrom VHF band to UHF bandABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15 VCBO
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
