Биполярный транзистор BFR182 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BFR182
Маркировка: RGs
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимальный постоянный ток коллектора (Ic): 0.035 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 8000 MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: SOT23
BFR182 Datasheet (PDF)
bfr182.pdf
BFR 182NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 182 RGs Q62702-F1315 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCol
bfr182.pdf
BFR182Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration Packag
bfr182t bfr182tw.pdf
BFR182T/BFR182TWVishay TelefunkenSilicon NPN Planar RF TransistorElectrostatic sensitive device. Observe precautions for handling. ApplicationsFor low noise and high gain broadband amplifiers atcollector currents from 1 mA to 20 mA.FeaturesD Low noise figureD High power gain1 113 652 13 57013 58194 92802 323BFR182T Marking: RG BFR182TW Marking: WRGPlastic cas
bfr182w.pdf
BFR 182WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 182W RGs Q62702-F1492 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values Unit
bfr182w.pdf
BFR182WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA3 21 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling pre
bfr182tw.pdf
isc Silicon NPN RF Transistor BFR182TWDESCRIPTIONLow Voltage UseUltra Super Mini Mold PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise and small signal amplifiersfrom VHF band to UHF bandABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15 VCBO
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050