BFR183T Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFR183T

Código: RH_RHs

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 10 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 0.065 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 7200 MHz

Ganancia de corriente contínua (hFE): 50

Encapsulados: SOT23

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BFR183T datasheet

 8.1. Size:56K  siemens
 bfr183w.pdf pdf_icon

BFR183T

BFR 183W NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 183W RHs Q62702-F1493 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Uni

 8.2. Size:56K  siemens
 bfr183.pdf pdf_icon

BFR183T

BFR 183 NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 183 RHs Q62702-F1316 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit

 8.3. Size:613K  infineon
 bfr183.pdf pdf_icon

BFR183T

BFR183 Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Packag

 8.4. Size:242K  inchange semiconductor
 bfr183w.pdf pdf_icon

BFR183T

isc Silicon NPN RF Transistor BFR183W DESCRIPTION High Power Gain High Current Gain Bandwidth Product Low Noise Figure Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones, cordless telephones(CT1, CT2,DEC, etc.). ABSOL

MOSTRAR MÁS

Otros transistores... BFR180W, BFR181, BFR181T, BFR181W, BFR182, BFR182T, BFR182W, BFR183, 9014, BFR183W, BFR18R, BFR19, BFR193, BFR194, BFR20, BFR21, BFR22