BFR183T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFR183T
Código: RH_RHs
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 10 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.065 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 7200 MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BFR183T
BFR183T Datasheet (PDF)
bfr183w.pdf
BFR 183WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 183W RHs Q62702-F1493 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values Uni
bfr183.pdf
BFR 183NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 183 RHs Q62702-F1316 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values Unit
bfr183.pdf
BFR183Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration Packag
bfr183w.pdf
isc Silicon NPN RF Transistor BFR183WDESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF frontend in wideband applications in theGHz range,such as analog and digital cellular telephones,cordless telephones(CT1, CT2,DEC, etc.).ABSOL
bfr183.pdf
isc Silicon NPN RF Transistor BFR183DESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF frontend in wideband applications in theGHz range,such as analog and digital cellular telephones,cordless telephones(CT1, CT2,DEC, etc.).ABSOLU
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
