BFR183W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BFR 183WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 183W RHs Q62702-F1493 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values Uni

isc Silicon NPN RF Transistor BFR183WDESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF frontend in wideband applications in theGHz range,such as analog and digital cellular telephones,cordless telephones(CT1, CT2,DEC, etc.).ABSOL

BFR 183NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA fT = 8 GHz F = 1.2 dB at 900 MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 183 RHs Q62702-F1316 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values Unit

BFR183Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration Packag

isc Silicon NPN RF Transistor BFR183DESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF frontend in wideband applications in theGHz range,such as analog and digital cellular telephones,cordless telephones(CT1, CT2,DEC, etc.).ABSOLU